US20040232443 Wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same

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United States of America

Application Number 10475703

Application Date 23.10.2003

Publication Number 20040232443

Publication Date 25.11.2004

Grant Number 6969889

Grant Date 29.11.2005

Publication Kind B2

IPC

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Applicants Samsung Electronics Co., Ltd.

Inventors Cho Beom-Seok
Jeong Chang-Oh

Agents Cantor Colburn, LLP

Priority Data 1020020000097 02.01.2002 KR

Title

(EN) Wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same

Abstract

(EN)

A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, drain electrodes and data lines is formed on the gate insulating layer and the semiconductor pattern. A protective layer is formed on the data wire. Pixel electrodes connected to the drain electrode via contact holes are formed on the protective layer. The gate wire and the data wire include triple layers of an adhesion layer, a Ag containing layer and a protection layer. The adhesion layer includes one of Cr, Cr alloy, Ti, Ti alloy, Mo, Mo alloy, Ta, Ta alloy, the Ag containing layer includes Ag or Ag alloy, and the protection layer includes one of IZO, Mo, Mo alloy, Cr and Cr alloy.

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27	Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
01	comprising only passive thin-film or thick-film elements formed on a common insulating substrate

G	PHYSICS
02	OPTICS
F	DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1	Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01	for the control of the intensity, phase, polarisation or colour
13	based on liquid crystals, e.g. single liquid crystal display cells
133	Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333	Constructional arrangements
1343	Electrodes

G	PHYSICS
02	OPTICS
F	DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1	Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01	for the control of the intensity, phase, polarisation or colour
13	based on liquid crystals, e.g. single liquid crystal display cells

G	PHYSICS
02	OPTICS
F	DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1	Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01	for the control of the intensity, phase, polarisation or colour
13	based on liquid crystals, e.g. single liquid crystal display cells
133	Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136	Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit

G	PHYSICS
02	OPTICS
F	DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1	Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01	for the control of the intensity, phase, polarisation or colour
13	based on liquid crystals, e.g. single liquid crystal display cells
133	Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136	Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362	Active matrix addressed cells

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1. US20040232443 - Wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same

G	PHYSICS
09	EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
F	DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9	Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30	in which the desired character or characters are formed by combining individual elements

H	ELECTRICITY
05	ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B	ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33	Electroluminescent light sources
12	Light sources with substantially two-dimensional radiating surfaces

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02	Manufacture or treatment of semiconductor devices or of parts thereof
04	the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18	the devices having semiconductor bodies comprising elements of group IV of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials
334	Multistep processes for the manufacture of devices of the unipolar type
335	Field-effect transistors
336	with an insulated gate

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71	Manufacture of specific parts of devices defined in group H01L21/7086
768	Applying interconnections to be used for carrying current between separate components within a device

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66	Types of semiconductor device

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66	Types of semiconductor device
68	controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76	Unipolar devices
772	Field-effect transistors
78	with field effect produced by an insulated gate
786	Thin-film transistors