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1. (US6376889) Dielectric thin film element and process for manufacturing the same

Office : United States of America
Application Number: 09423522 Application Date: 10.11.1999
Publication Number: 6376889 Publication Date: 23.04.2002
Grant Number: 6376889 Grant Date: 23.04.2002
Publication Kind : B1
Prior PCT appl.: Application Number:JP98002086 ; Publication Number: Click to see the data
IPC:
H01L 29/84
H01L 37/00
H01L 37/02
H01L 41/24
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
84
controllable by variation of applied mechanical force, e.g. of pressure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
37
Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
37
Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
using thermal change of dielectric constant, e.g. working above and below the Curie point
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
24
of elements of ceramic composition
Applicants: Mitsubishi Denki Kabushiki Kaisha
Inventors: Maeda, Chisako
Yamada, Akira
Umemura, Toshio
Uchikawa, Fusaoki
Agents: Sughrue Mion, PLLC
Priority Data: PCT/JP97/01601 13.05.1997 JP
WO98052235 19.11.1998 WO
Title: (EN) Dielectric thin film element and process for manufacturing the same
Abstract: front page image
(EN)

A process for manufacturing a plurality of dielectric thin film devices by forming a lower layer on a substrate, coating a dielectric thin film on the lower layer, forming the dielectric thin film into a plurality of predetermined shapes, and, if desired, forming an upper structure on each of the plurality of dielectric thin films, wherein the dielectric thin film is divisionally formed on the lower layer by using a mask after the lower layer is formed to have a stress in a direction opposite to that of the dielectric thin film, or alternatively the dielectric thin film is divided into predetermined shapes after being formed.


Also published as:
AU1998072358WO/1998/052235