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1. US20020048289 - Devices with optical gain in silicon

Office United States of America
Application Number 09924392
Application Date 07.08.2001
Publication Number 20020048289
Publication Date 25.04.2002
Grant Number 6734453
Grant Date 11.05.2004
Publication Kind B2
IPC
H01L 31/0264
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
H01L 29/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
15Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
G02B 6/122
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
10of the optical waveguide type
12of the integrated circuit kind
122Basic optical elements, e.g. light-guiding paths
G02B 6/125
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
10of the optical waveguide type
12of the integrated circuit kind
122Basic optical elements, e.g. light-guiding paths
125Bends, branchings or intersections
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
34containing only elements of group IV of the periodic system
CPC
H01L 33/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
34containing only elements of group IV of the periodic system
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
G02B 6/1225
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
10of the optical waveguide type
12of the integrated circuit kind
122Basic optical elements, e.g. light-guiding paths
1225comprising photonic band-gap structures or photonic lattices
G02B 6/125
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
10of the optical waveguide type
12of the integrated circuit kind
122Basic optical elements, e.g. light-guiding paths
125Bends, branchings or intersections
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
H01S 3/0604
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
06Construction or shape of active medium
0602Crystal lasers or glass lasers
0604in the form of a plate or disc
Applicants Translucent Photonics, Inc.
Inventors Atanackovic, Petar B.
Marshall, Larry R.
Agents Davis, Paul
Heller Ehrman White & McAuliffe
Priority Data 09924392 07.08.2001 US
Title
(EN) Devices with optical gain in silicon
Abstract
(EN)

A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.