US6178121 Semiconductor memory device, semiconductor device, and electronic apparatus using the semiconductor device

Settings

Stemming

Single Family Member

Include NPL

Feedback

Goto Application

Office

United States of America

Application Number 09367053

Application Date 28.09.1999

Publication Number 6178121

Publication Date 23.01.2001

Grant Number 6178121

Grant Date 23.01.2001

Publication Kind B1

IPC

CPC

Applicants Seiko Epson Corporation

Inventors Maruyama, Akira

Agents Oliff & Berridge PLC

Priority Data 09341088 11.12.1997 JP

Title

(EN) Semiconductor memory device, semiconductor device, and electronic apparatus using the semiconductor device

Abstract

(EN)

A memory cell (1) with a MOS transistor (5) and a data-storing capacitor (7). One of two input/output electrodes of the MOS transistor (5) is connected to a bit line (36) and a gate electrode is connected to a word line (38). A first electrode (6) of the data-storing capacitor (7) is connected to the other input/output electrode of the MOS transistor (5) and a second electrode (14) is connected to a potential control circuit (40). When the data stored in the memory cell (1) is “HIGH”, the potential control circuit (40) changes the potential of the second electrode (14) of the data-storing capacitor (7) from a precharge potential VCC/2 to a ground potential GND after data-writing and data-readout operations are completed. When the data stored in the memory cell (1) is “LOW”, the potential control circuit (40) changes the potential of the second electrode (14) of the data-storing capacitor (7) from the precharge potential VCC/2 to a power potential VCC after data-writing and data-readout operations are completed.

G	PHYSICS
11	INFORMATION STORAGE
C	STATIC STORES
7	Arrangements for writing information into, or reading information out from, a digital store

G	PHYSICS
11	INFORMATION STORAGE
C	STATIC STORES
11	Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21	using electric elements
34	using semiconductor devices
40	using transistors
401	forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063	Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407	for memory cells of the field-effect type

G	PHYSICS
11	INFORMATION STORAGE
C	STATIC STORES
11	Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21	using electric elements
34	using semiconductor devices
40	using transistors
401	forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063	Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407	for memory cells of the field-effect type
4074	Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits

G	PHYSICS
11	INFORMATION STORAGE
C	STATIC STORES
7	Arrangements for writing information into, or reading information out from, a digital store

G	PHYSICS
11	INFORMATION STORAGE
C	STATIC STORES
11	Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21	using electric elements
34	using semiconductor devices
40	using transistors
401	forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063	Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407	for memory cells of the field-effect type

Processing

National Phase Entries

Authority File

Settings

Feedback

Goto Application

1. US6178121 - Semiconductor memory device, semiconductor device, and electronic apparatus using the semiconductor device