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1. US5202574 - Semiconductor having improved interlevel conductor insulation

Office
United States of America
Application Number 07933606
Application Date 21.08.1992
Publication Number 5202574
Publication Date 13.04.1993
Grant Number 5202574
Grant Date 13.04.1993
Publication Kind A
IPC
H01L 21/8242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8242Dynamic random access memory structures (DRAM)
CPC
H01L 27/10873
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
10844Multistep manufacturing methods
10847for structures comprising one transistor one-capacitor memory cells
10873with at least one step of making the transistor
Y10S 438/981
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
438Semiconductor device manufacturing: process
981Utilizing varying dielectric thickness
Applicants Texas Instruments Incorporated
Inventors Fu Horng-Sen
Tasch Al F.
Chatterjee Pallab K.
Agents Stoltz Richard A.
Kesterson James C.
Donaldson Richard L.
Priority Data 06146938 02.05.1980 US
Title
(EN) Semiconductor having improved interlevel conductor insulation
Abstract
(EN)

A semiconductor device and method of manufacture employs an improved insulating layer to laterally separate conductive layers or regions. A relatively thick insulating layer is anistropically patterned to form an electrode having a thick insulating layer on its side walls. Subsequently defined conductive regions are separated from the electrode by a distance determined by the thickness of the insulating layer. In devices requiring multiple level polycrystalline silicon electrodes, shorts between electrodes are reduced; in MOS devices, operating parameters are improved due to decreased overlap of the gate electrode over the source or drain region, decreased contamination of the gate electrode during manufacture, and more uniform gate oxide definition along the active channel between the source and drain.