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1. US4190799 - Noncontacting measurement of hall effect in a wafer

Office
United States of America
Application Number 05935518
Application Date 21.08.1978
Publication Number 4190799
Publication Date 26.02.1980
Grant Number 4190799
Grant Date 26.02.1980
Publication Kind A
IPC
G01R 31/26
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
G01R 31/265
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
265Contactless testing
G01R 33/12
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
12Measuring magnetic properties of articles or specimens of solids or fluids
CPC
G01R 33/1253
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
12Measuring magnetic properties of articles or specimens of solids or fluids
1253Measuring galvano-magnetic properties
G01R 31/265
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
265Contactless testing
Applicants Bell Telephone Laboratories, Incorporated
Inventors Miller Gabriel L.
Robinson David A. H.
Agents Friedman Allen N.
Title
(EN) Noncontacting measurement of hall effect in a wafer
Abstract
(EN)

The magnitude and sign of the Hall angle of the material of a wafer (13) are measured by a combined capacitive and inductive coupling technique which does not require physically contacting the wafer (13). Contacting methods in common use introduce surface damage or contamination which may reduce the yield of microelectronic circuits on semiconductor wafers and normally in addition require special sample geometries. In this technique an rf signal is applied to a pair of concentric planar electrodes (11,12) adjacent to the wafer (13), thus capacitively coupling a radial rf current into the wafer. A magnetic field applied perpendicular to the wafer produces a circular component of rf current because of the Hall effect. This circular rf current produces an axial rf magnetic field which couples to a pickup coil (15). The pickup signal is amplified and detected to produce an output signal related to the sign and magnitude of the Hall angle of the wafer material.