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1. US20220014176 - HIGH PERFORMANCE TUNABLE FILTER

Office
United States of America
Application Number 16922471
Application Date 07.07.2020
Publication Number 20220014176
Publication Date 13.01.2022
Publication Kind A1
IPC
H03H 9/46
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
46Filters
CPC
H03H 2009/02165
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02165Tuning
H03H 9/46
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
46Filters
Applicants QUALCOMM Incorporated
Inventors Je-Hsiung LAN
Jonghae KIM
Title
(EN) HIGH PERFORMANCE TUNABLE FILTER
Abstract
(EN)

Disclosed is a gallium arsenide (GaAs) enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors, metal-insulator-metal (MIM) capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (varactor) high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (TGV) are formed. The varactor along with the MIM capacitors and the 3D inductors is formed in an upper conductive structure on upper surface of the GaAs substrate. Lower conductive structure comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end (RFFE) devices.


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