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1. US20200176718 - ANTI-REFLECTION BOTTOM-EMITTING TYPE OLED DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

Office United States of America
Application Number 16332361
Application Date 15.02.2019
Publication Number 20200176718
Publication Date 04.06.2020
Publication Kind A1
IPC
H01L 51/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 51/5284
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5281Arrangements for contrast improvement, e.g. preventing reflection of ambient light
5284comprising a light absorbing layer, e.g. black layer
H01L 51/5253
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5237Passivation; Containers; Encapsulation, e.g. against humidity
5253Protective coatings
Applicants Wuhan China Star Optoelectronics Technology Co., Ltd.
Inventors Yuejun TANG
Xueyun Ll
Priority Data 201811459470.9 30.11.2018 CN
Title
(EN) ANTI-REFLECTION BOTTOM-EMITTING TYPE OLED DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
Abstract
(EN)

An anti-reflection bottom-emitting type OLED display device and a manufacturing method are provided. The anti-reflection bottom-emitting type OLED display device includes a substrate, multiple drive transistors, and a light emitting layer. The substrate is provided with a plurality of black matrixes spaced apart from each other. The drive transistors are arranged in an array on the substrate and arranged corresponding to the black matrixes respectively. The light emitting layer is disposed on the drive transistors. An opening region is arranged between each two adjacent black matrixes. The light emitting layer includes multiple light-emitting material layers arranged in an array. Each light-emitting material layer defines a display region and a non-display region. Each opening region is arranged corresponding to each display region, and each non-display region is arranged corresponding to each black matrix. Each display region coincides with each opening region between the black matrixes on the substrate.

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