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1. US20200014166 - Terahertz lasers and terahertz extraction

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United States of America
Application Number 16495598
Application Date 23.03.2018
Publication Number 20200014166
Publication Date 09.01.2020
Grant Number 10944232
Grant Date 09.03.2021
Publication Kind B2
IPC
H01S 3/30
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3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
30using scattering effects, e.g. stimulated Brillouin or Raman effects
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1Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
02solid
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3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
106by controlling a device placed within the cavity
108using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
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3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11in which the quality factor of the optical resonator is rapidly changed, i.e. giant-pulse technique
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3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
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3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
106by controlling a device placed within the cavity
108using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
1083using parametric generation
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3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
106by controlling a device placed within the cavity
108using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
1086using scattering effects, e.g. Raman or Brillouin effect
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3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11Pulse generation, e.g. Q-switching, mode locking
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3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
1601characterised by an active (lasing) ion
1603rare earth
1608erbium
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SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
14characterised by the material used as the active medium
16Solid materials
1601characterised by an active (lasing) ion
1603rare earth
1611neodymium
Applicants Macquarie University
Inventors Andrew Lee
Helen M. Pask
David James Spence
Agents Caesar Rivise, PC
Priority Data 2017901057 24.03.2017 AU
Title
(EN) Terahertz lasers and terahertz extraction
front page image
Abstract
(EN)

A frequency electromagnetic radiation generation system including: a non linear crystal producing THz frequency electromagnetic radiation; a fundamental beam that interacts with the non linear crystal thereby emitting a THz frequency electromagnetic radiation emission; a silicon intermediary coupled to the non linear crystal for output channeling the THz frequency electromagnetic radiation emission to an output environment; the system utilising a fundamental beam which has a photon energy below the bandgap energy of silicon.
Related patent documents
AU2017901057
CA3057518
EP3602700
JP2020514833
WO/2018/170555
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