Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (US20190227732) MAGNETORESISTIVE MEMORY MODULE AND COMPUTING DEVICE INCLUDING THE SAME

Office : United States of America
Application Number: 16357435 Application Date: 19.03.2019
Publication Number: 20190227732 Publication Date: 25.07.2019
Publication Kind : A1
IPC:
G06F 3/06
H05K 1/18
H01L 27/22
H01F 10/32
H01L 43/02
G11C 11/16
G06F 11/10
G06N 20/00
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
3
Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
06
Digital input from, or digital output to, record carriers
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1
Printed circuits
18
Printed circuits structurally associated with non-printed electric components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
22
including components using galvano-magnetic effects, e.g. Hall effect; using similar magnetic field effects
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
F
MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10
Thin magnetic films, e.g. of one-domain structure
32
Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
11
Error detection; Error correction; Monitoring
07
Responding to the occurrence of a fault, e.g. fault tolerance
08
Error detection or correction by redundancy in data representation, e.g. by using checking codes
10
Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
[IPC code unknown for G06N 20]
CPC:
G11C 11/1673
G06F 3/0652
H01L 27/228
H01F 10/329
H01L 43/02
G11C 11/1675
H01F 10/3254
G11C 11/161
G06F 11/106
G06F 3/0608
G06F 3/0673
G06N 20/00
H05K 2201/10159
H05K 2201/10522
H05K 2201/10166
H05K 1/181
Applicants: MemRay Corporation
YONSEI UNIVERSITY, UNIVERSITY - INDUSTRY FOUNDATION (UIF)
Inventors: Myoungsoo JUNG
Priority Data: 10-2016-0143591 31.10.2016 KR
Title: (EN) MAGNETORESISTIVE MEMORY MODULE AND COMPUTING DEVICE INCLUDING THE SAME
Abstract: front page image
(EN)

A magnetoresistive memory module used as a main memory of a computing device is provided. A plurality of memory chips are mounted on a printed circuit board, and a memory controller performs data scrubbing. Each memory chip includes a plurality of magnetoresistive memory cells. Each magnetoresistive memory cell includes a magnetoresistive element and an access transistor that transfers a current to the magnetoresistive element, and has a size of a cell area that is substantially similar to a size of a DRAM cell area.