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1. US20190140555 - Three-level inverter

Office
United States of America
Application Number 16235755
Application Date 28.12.2018
Publication Number 20190140555
Publication Date 09.05.2019
Grant Number 10554150
Grant Date 04.02.2020
Publication Kind B2
IPC
H02M 7/487
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42Conversion of dc power input into ac power output without possibility of reversal
44by static converters
48using discharge tubes with control electrode or semiconductor devices with control electrode
483Converters with outputs that each can have more than two voltage levels
487Neutral point clamped inverters
H02M 1/00
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1Details of apparatus for conversion
H01L 29/872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
872Schottky diodes
H01L 29/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
CPC
H01L 29/1608
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
1608Silicon carbide
H02M 7/487
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42Conversion of dc power input into ac power output without possibility of reversal
44by static converters
48using discharge tubes with control electrode or semiconductor devices with control electrode
483Converters with outputs that each can have more than two voltages levels
487Neutral point clamped inverters
H01L 29/872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
872Schottky diodes
H02M 1/00
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1Details of apparatus for conversion
Applicants FUJI ELECTRIC CO., LTD.
Inventors Shuangching Chen
Priority Data 2017-007128 18.01.2017 JP
Title
(EN) Three-level inverter
Abstract
(EN)

A three-level inverter includes a first semiconductor switching element disposed between a direct-current high potential terminal and an alternating-current output terminal, a second semiconductor switching element disposed between a direct-current low potential terminal, which is paired with the direct-current high potential terminal, and the alternating-current output terminal, first and second reflux diodes which are disposed reverse-parallelly with the first and second semiconductor switching elements, respectively, and a semiconductor circuit which controls gate voltages of the first and second semiconductor switching elements by selectively applying thereto a direct-current intermediate voltage which is given to a direct-current intermediate potential terminal. Inductance elements are connected in series to the first and second reflux diodes, respectively.