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1. (US20190043548) Memory device

Office : United States of America
Application Number: 16075474 Application Date: 03.02.2017
Publication Number: 20190043548 Publication Date: 07.02.2019
Grant Number: 10453510 Grant Date: 22.10.2019
Publication Kind : B2
Prior PCT appl.: Application Number:PCTKR2017001234 ; Publication Number: Click to see the data
IPC:
G11C 11/16
H01L 43/02
H01L 43/08
H01L 43/10
H01L 43/12
H01L 43/04
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
04
of Hall-effect devices
CPC:
H01L 43/02
G11C 11/161
H01L 43/04
H01L 43/08
H01L 43/10
H01L 43/12
Applicants: Industry-University Cooperation Foundation Hanyang University
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
Inventors: Jea Gun Park
Du Yeong Lee
Seung Eun Lee
Agents: Sughrue Mion, PLLC
Priority Data: 10-2016-0015086 05.02.2016 KR
10-2016-0015139 05.02.2016 KR
10-2016-0015154 05.02.2016 KR
10-2016-0015176 05.02.2016 KR
Title: (EN) Memory device
Abstract: front page image
(EN)

The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic (SyAF) layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, SyAF layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the SyAF layers to grow in the FCC (111) direction.


Also published as:
CN109155360WO/2017/135767