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1. (US20180350713) SEMICONDUCTOR DEVICE

Office : United States of America
Application Number: 15779617 Application Date: 29.01.2016
Publication Number: 20180350713 Publication Date: 06.12.2018
Publication Kind : A1
Prior PCT appl.: Application Number:PCTJP2016052595 ; Publication Number: Click to see the data
IPC:
H01L 23/367
H01L 23/50
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
36
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
367
Cooling facilitated by shape of device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leadsĀ or terminal arrangements
50
for integrated circuit devices
CPC:
H01L 23/367
H01L 23/50
Applicants: Mitsubishi Electric Corporation
Inventors: Ryoji MURAI
Mitsunori AIKO
Takaaki SHIRASAWA
Priority Data:
Title: (EN) SEMICONDUCTOR DEVICE
Abstract: front page image
(EN)

A technique disclosed in the Description relates to a technique for improving the heat dissipation capability of a semiconductor element and the heat dissipation capability of a lead electrode without increasing the size of a product. A semiconductor device of the technique includes the following: a semiconductor element; a lead electrode having a lower surface connected to an upper surface of the semiconductor element at one end of the lead electrode, the lead electrode being an external terminal; a cooling mechanism disposed on a lower surface side of the semiconductor element; and a heat dissipation mechanism provided to be thermally joined between the lower surface of the lead electrode and the cooling mechanism, the lower surface being more adjacent to an other-end side of the lead electrode than the one end, the heat dissipation mechanism including at least one insulating layer.


Also published as:
CN108496247DE112016006331WO/2017/130370