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1. (US20180337067) SUBSTRATE LIQUID PROCESSING APPARATUS, SUBSTRATE LIQUID PROCESSING METHOD AND RECORDING MEDIUM

Office : United States of America
Application Number: 15777941 Application Date: 17.11.2016
Publication Number: 20180337067 Publication Date: 22.11.2018
Publication Kind : A1
Prior PCT appl.: Application Number:PCTJP2016084104 ; Publication Number: Click to see the data
IPC:
H01L 21/67
H01L 21/306
H01L 21/687
H01L 21/02
B08B 3/08
B08B 3/04
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
687
using mechanical means, e.g. chucks, clamps or pinches
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
04
Cleaning involving contact with liquid
08
the liquid having chemical or dissolving effect
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
04
Cleaning involving contact with liquid
CPC:
B08B 3/041
B08B 3/08
H01L 21/02057
H01L 21/30604
H01L 21/67051
H01L 21/6708
H01L 21/68764
Applicants: Tokyo Electron Limited
Inventors: Kazuki Kosai
Yoshihiro Kai
Gentaro Goshi
Hiroshi Komiya
Seiya Fujimoto
Takahisa Otsuka
Priority Data: 2015-228833 24.11.2015 JP
Title: (EN) SUBSTRATE LIQUID PROCESSING APPARATUS, SUBSTRATE LIQUID PROCESSING METHOD AND RECORDING MEDIUM
Abstract: front page image
(EN)

A substrate processing apparatus includes a substrate holding unit 31 configured to hold a substrate W; an outer nozzle 45 configured to discharge a processing liquid toward a surface of the substrate from a position at an outside of an outer edge of the substrate held by the substrate holding unit such that at least a central portion of the surface of the substrate is covered with a liquid film of the discharged processing liquid; and an actuator 46 (90) configured to change a height position or a discharge angle of the outer nozzle.


Also published as:
CN108292599KR1020180084797WO/2017/090505