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1. US20160268497 - Spin control mechanism and spin device

Office
United States of America
Application Number 15032679
Application Date 29.10.2014
Publication Number 20160268497
Publication Date 15.09.2016
Grant Number 09882118
Grant Date 30.01.2018
Publication Kind B2
IPC
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 43/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Details
B81B 5/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
5Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
H01L 23/367
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
367Cooling facilitated by shape of device
H02K 49/06
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
KDYNAMO-ELECTRIC MACHINES
49Dynamo-electric clutches; Dynamo-electric brakes
06of the synchronous type
CPC
H01L 43/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Details
B81B 5/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
5Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
H01L 23/3675
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
367Cooling facilitated by shape of device
3675characterised by the shape of the housing
H01L 37/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
37Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H02K 49/06
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
KDYNAMO-ELECTRIC MACHINES
49Dynamo-electric clutches; Dynamo-electric brakes
06of the synchronous type
Applicants JAPAN SCIENCE AND TECHNOLOGY AGENCY
The University of York
Inventors Atsufumi Hirohata
Priority Data 2013-227153 31.10.2013 JP
Title
(EN) Spin control mechanism and spin device
Abstract
(EN)

A spin control mechanism includes a spin portion and a first channel portion. The spin portion has a magnetic moment that can be reversed and rotated. The first channel portion is provided in contact with the spin portion, and is configured from ferromagnetic insulator. Then, the spin control mechanism controls a direction of the magnetic moment of the spin portion using a spin current generated by a temperature gradient provided to the first channel portion.