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1. (US20140355337) Method of pinning domain walls in a nanowire magnetic memory device

Office : United States of America
Application Number: 14350434 Application Date: 08.10.2012
Publication Number: 20140355337 Publication Date: 04.12.2014
Grant Number: 09293184 Grant Date: 22.03.2016
Publication Kind : B2
Prior PCT appl.: Application Number:PCTGB2012052493 ; Publication Number: Click to see the data
IPC:
G11C 19/00
G11C 19/02
G11C 7/00
G11C 11/00
G11C 5/02
G11C 19/38
G11C 11/16
G11C 11/14
H04L 12/26
G11C 19/08
G11C 14/00
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
19
Digital stores in which the information is moved stepwise, e.g. shift registers
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
19
Digital stores in which the information is moved stepwise, e.g. shift registers
02
using magnetic elements
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
7
Arrangements for writing information into, or reading information out from, a digital store
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
5
Details of stores covered by group G11C11/63
02
Disposition of storage elements, e.g. in the form of a matrix array
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
19
Digital stores in which the information is moved stepwise, e.g. shift registers
38
two-dimensional, e.g. horizontal and vertical shift registers
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
14
using thin-film elements
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
L
TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
12
Data switching networks
02
Details
26
Monitoring arrangements; Testing arrangements
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
19
Digital stores in which the information is moved stepwise, e.g. shift registers
02
using magnetic elements
08
using thin films in plane structure
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
14
Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Applicants: University of York
Inventors: Kevin O'Grady
Gonzalo Vallejo Fernandez
Atsufumi Hirohata
Agents: DASCENZO Intellectual Property Law, P.C.
Priority Data: 1117446.3 10.10.2011 GB
Title: (EN) Method of pinning domain walls in a nanowire magnetic memory device
Abstract: front page image
(EN)

There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600 Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements.