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1. US20140234550 - ATOMIC LAYER DEPOSITION OF TRANSITION METAL THIN FILMS

Office
United States of America
Application Number 14130987
Application Date 05.06.2012
Publication Number 20140234550
Publication Date 21.08.2014
Publication Kind A1
IPC
C23C 16/18
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06characterised by the deposition of metallic material
18from metallo-organic compounds
CPC
C23C 16/18
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
06characterised by the deposition of metallic material
18from metallo-organic compounds
Applicants Winter Charles H.
WAYNE STATE UNIVERSITY
Knisley Thomas J.
Ariyasena Thiloka
Inventors Winter Charles H.
Knisley Thomas J.
Ariyasena Thiloka
Title
(EN) ATOMIC LAYER DEPOSITION OF TRANSITION METAL THIN FILMS
Abstract
(EN)

An atomic layer deposition method for forming metal films on a substrate comprises a deposition cycle including:

    • a) contacting a substrate with a vapor of a metal-containing compound described by formula 1 for a first predetermined pulse time to form a first modified surface:


MLn   (1)

wherein:
n is 1 to 8;
M is a transition metal;
L is a ligand;

    • b) contacting the first modified surface with an acid for a second predetermined pulse time to form a second modified surface; and
    • c) contacting the second modified surface with a reducing agent for a third predetermined pulse time to form a metal layer.

Also published as
DE1120120028716
DE112012002871