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1. (SG11201806724Y) ORGANOMETALLIC COMPOUND AND METHOD

Office : Singapore
Application Number: 11201806724Y Application Date: 10.02.2017
Publication Number: 11201806724Y Publication Date: 27.09.2018
Publication Kind : A1
Prior PCT appl.: Application Number:PCTCA2017050158 ; Publication Number:2017136945 Click to see the data
IPC:
C07F 7/04
C23C 16/40
C23C 16/44
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
02
Silicon compounds
04
Esters of silicic acids
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
CPC:
C07F 7/025
C23C 16/40
C23C 16/401
C23C 16/405
C23C 16/45553
C23C 16/402
Applicants: SEASTAR CHEMICALS INC.
Inventors: ODEDRA, Rajesh
DONG, Cunhai
CEMBELLA, Shaun
Priority Data: 2920646 12.02.2016 CA
Title: (EN) ORGANOMETALLIC COMPOUND AND METHOD
Abstract:
(EN) (A)x-M-(0R3)4-x (I) 10 11 12 PRV 13 14 15 16 17 18 19 20 L. Figure 1 . Sketch of ALD system for thin film deposition. W O 20 17 / 1369 45 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/136945 Al 17 August 2017 (17.08.2017) WIPO I PCT (51) International Patent Classification: C07F 7/04 (2006.01) C23C 16/44 (2006.01) C23C 16/40 (2006.01) (21) International Application Number: PCT/CA2017/050158 (22) International Filing Date: 10 February 2017 (10.02.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 2920646 12 February 2016 (12.02.2016) CA (71) Applicant: SEASTAR CHEMICALS INC. [CA/CA]; 10005 McDonald Park Road, Sidney, British Columbia V8L 5Y2 (CA). (72) Inventors: ODEDRA, Rajesh; 10005 McDonald Park Road, Sidney, British Columbia V8L 5Y2 (CA). DONG, Cunhai; 3972 Oakwinds Street, Victoria, British Columbia V8N 3B3 (CA). CEMBELLA, Shaun; 12 - 1260 Pem- broke Street, Victoria, British Columbia V8T 1J9 (CA). (74) Agents: THOMPSON, Douglas B. et al.; Thompson Cooper LLP, Suite 201, 1007 Fort Street, Victoria, British Columbia V8V 3K5 (CA). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) (54) Title: ORGANOMETALLIC COMPOUND AND METHOD 11111111111111011101111111111101011111011101110111111111110111111111111111111110111111 (57) Abstract: A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(0R3)4-x wherein: A is selected from the group consisting of -NR1R2, -N(R4) (CH2)nN(R5R6), -N=C(NR4R5)(NR6R7), OCOR1, halo and Y; Rl and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of Rl and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered het- erocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consist- ing of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4. Compounds of the invention may be useful as precursors in chemical phase deposition processes such as atomic layer de- position (ALD), chemical vapour deposition (CVD), plasma assisted ALD and plasma assisted CVD. Meth- ods of low temperature vapour phase deposition of metal oxide films, such as Si02 films, are also provided.
Also published as:
KR1020180116308EP3414254CN109588049WO/2017/136945