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1. (SG11201806324U) MEMORY CELL, MEMORY DEVICE, AND METHODS OF FORMING THE SAME

Office : Singapore
Application Number: 11201806324U Application Date: 19.01.2017
Publication Number: 11201806324U Publication Date: 30.08.2018
Publication Kind : A1
Prior PCT appl.: Application Number:PCTSG2017050028 ; Publication Number:2017131584 Click to see the data
IPC:
H01L 43/10
G11C 11/15
G11C 11/16
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
14
using thin-film elements
15
using multiple magnetic layers
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
CPC:
H01L 43/10
G11C 11/161
H01L 43/08
H01L 43/12
Applicants: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
Inventors: FUKUZAWA, Hideaki
YU, Jun
HAN, Michael
WANG, Xinpeng
BLIZNETSOV, Vladimir
Priority Data: 10201600735X 29.01.2016 SG
Title: (EN) MEMORY CELL, MEMORY DEVICE, AND METHODS OF FORMING THE SAME
Abstract:
(EN) (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization MD 1111101110101011111 Mt 01110111011 01 10111101111111101111011# International Bureau 0.. .... .. (10) International Publication Number (43) International Publication Date ..... .....!;,' WO 2017/131584 Al 3 August 2017 (03.08.2017) WI P0 I P CT — (51) (21) (22) (25) Filing Language: (26) Publication Language: (30) (71) Applicant: AGENCY FOR SCIENCE, TECHNOLOGY (72) International Patent Classification: tronics, 2 Fusionopolis Way, #08-02 Innovis Tower, Singa- H01L 43/10 (2006.01) G11C 11/16 (2006.01) pore 138634 (SG). BLIZNETSOV, Vladimir; c/o In- G11C 11/15 (2006.01) dustry Development, Institute of Microelectronics, 2 Fu- International Application Number: sionopolis Way, #08-02 Innovis Tower, Singapore 138634 PCT/SG2017/050028 (SG). (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; International Filing Date: P.O. Box 1088, Rochor Post Office, Rochor Road, Singa- 19 January 2017 (19.01.2017) pore 911833 (SG). English (81) Designated States (unless otherwise indicated, for every English kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, Priority Data: BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, 10201600735X 29 January 2016 (29.01.2016) SG DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, AND RESEARCH [SG/SG]; 1 Fusionopolis Way, #20-10 KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, Connexis, Singapore 138632 (SG). MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, Inventors: FUKUZAWA, Hideaki; c/o Industry Develop- RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, ment, Institute of Microelectronics, 2 Fusionopolis Way, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, #08-02 Innovis Tower, Singapore 138634 (SG). YU, Jun; ZA, ZM, ZW. c/o Industry Development, Institute of Microelectronics, 2 Fusionopolis Way, #08-02 Innovis Tower, Singapore (84) Designated States (unless otherwise indicated, for every 138634 (SG). HAN, Michael; c/o Industry Development, kind of regional protection available): ARIPO (BW, GH, Institute of Microelectronics, 2 Fusionopolis Way, #08-02 GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, Innovis Tower, Singapore 138634 (SG). WANG, Xin- TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, peng; c/o Industry Development, Institute of Microelec- TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, [Continued on next page] — = Title: MEMORY CELL, MEMORY DEVICE, AND METHODS OF FORMING THE SAME FIG. 3 r (57) Abstract: Various embodiments may provide a memory cell including a magnetic pinned layer with a substantially j 300 fixed magnetization direction, a crystalline spacer layer in contact with the magnetic pinned layer, and a magnetic stor- age layer. The magnetic storage layer may include an amorphous interface sub-layer in contact with the crystalline 308 spacer layer, the amorphous interface sub-layer including a first alloy of iron (Fe) and at least one element. The amorph- ous storage layer may also include an amorphous enhance- 306b ment sub-layer in contact with the amorphous interface sub- layer, the amorphous enhancement sub-layer including a second alloy of iron (Fe) and at least one element. The 306a memory cell may additionally include a cap layer in contact with the amorphous enhancement sub-layer. A concentration of the at least one further element comprised in the first alloy and a concentration of the at least one further element 304 com- prised in the second alloy may be different. 302 — (54) = = = = = = 306 — — = 1-1 iv Ot in Il M Il --.... IN Il 0 ei O WO 2017/131584 All#11101M01101DEIRMEDEMIOMOIEM111111111111110110111111 LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, Published: SM, TR), GW, KM, ML, MR, NE, SN, OAPI (BF, BJ, CF, CG, CI, CM, TD, TG). GA, GN, GQ, with international search report (Art. 21(3))
Also published as:
WO/2017/131584