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1. RU0002702802 - FIELD TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM

Office
Russian Federation
Application Number 2018136357
Application Date 16.03.2017
Publication Number 0002702802
Publication Date 11.10.2019
Grant Number
Grant Date 11.10.2019
Publication Kind C1
IPC
G09F 9/30
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30in which the desired character or characters are formed by combining individual elements
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
G09F 9/30
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30in which the desired character or characters are formed by combining individual elements
H05B 33/02
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
02Details
H05B 33/14
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
12Light sources with substantially two-dimensional radiating surfaces
14characterised by the chemical or physical composition or the arrangement of the electroluminescent material ; , or by the simultaneous addition of the electroluminescent material in or onto the light source
H01L 29/78696
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78696characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
H01L 27/1225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
1225with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
H01L 29/7869
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
7869having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Inventors УЕДА Наоюки (JP)
НАКАМУРА Юки (JP)
АБЕ Юкико (JP)
МАЦУМОТО Синдзи (JP)
СОНЕ Юдзи (JP)
САОТОМЕ Риоити (JP)
АРАЕ Саданори (JP)
КУСАЯНАГИ Минехиде (JP)
UEDA, Naoyuki (JP)
NAKAMURA, Yuki (JP)
ABE, Yukiko (JP)
MATSUMOTO, Shinji (JP)
SONE, Yuji (JP)
SAOTOME, Ryoichi (JP)
ARAE, Sadanori (JP)
KUSAYANAGI, Minehide (JP)
Priority Data 2016-055571 18.03.2016 JP
2016-157920 10.08.2016 JP
Title
(EN) FIELD TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM
(RU) ПОЛЕВОЙ ТРАНЗИСТОР, ОТОБРАЖАЮЩИЙ ЭЛЕМЕНТ, УСТРОЙСТВО ОТОБРАЖЕНИЯ ИЗОБРАЖЕНИЯ И СИСТЕМА
Abstract
(EN) FIELD: physics. SUBSTANCE: invention relates to field-effect transistors and image display devices. Field transistor includes a gate electrode, a source electrode and a drain electrode, an active layer which is formed between the source electrode and the drain electrode, and insulating layer of gate, which is formed between gate electrode and active layer, active layer includes at least two types of oxide semiconductor layers, including layer A and layer B, wherein active layer includes three or more oxide semiconductor layers, including two or more layers A, and wherein active layer is multilayer structure of ABA from three layers, which represent layer A, layer B and layer A, arranged one above the other in this order, one of layers A is in contact with insulating layer of gate, and other of layers A is in contact with source electrode and drain electrode. EFFECT: invention discloses a field transistor, a display element, an image display device and a system. 18 cl, 13 dwg, 2 tbl
(RU) Изобретение относится к полевым транзисторам и устройствам отображения изображения. Полевой транзистор включает в себя электрод затвора, электрод истока и электрод стока, активный слой, который сформирован между электродом истока и электродом стока, и изолирующий слой затвора, который сформирован между электродом затвора и активным слоем, активный слой включает в себя по меньшей мере два вида оксидных полупроводниковых слоев, в том числе слой A и слой B, причем активный слой включает в себя три или более оксидных полупроводниковых слоев, в том числе два или более слоев A, и при этом активный слой является многослойной структурой АВА из трех слоев, которые представляют собой слой А, слой В и слой А, размещенные друг над другом в этом порядке, один из слоев А находится в контакте с изолирующим слоем затвора, и другой из слоев А находится в контакте с электродом истока и электродом стока. 4 н. и 14 з.п. ф-лы, 13 ил., 2 табл.