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1. RU0002673778 - OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURE THEREOF

Office Russian Federation
Application Number 2017134873
Application Date 07.03.2016
Publication Number 0002673778
Publication Date 29.11.2018
Grant Number
Grant Date 29.11.2018
Publication Kind C1
IPC
H01L 31/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 51/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
CPC
C03C 17/3417
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
3411with at least two coatings of inorganic materials
3417all coatings being oxide coatings
C03C 17/36
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
C03C 17/40
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
40all coatings being metal coatings
C23C 16/407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
407of zinc, germanium, cadmium, indium, tin, thallium or bismuth
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/022466
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
Inventors МакКЕЙМИ Джеймс У. (US)
МА Цзихун (US)
КАБАГАМБЕ Бенджамин (US)
КОРАМ Кваку К. (US)
ХУН Чен-Хун (US)
НЕЛИС Гэри Дж. (US)
NELIS, Gary J. (US)
HUNG, Cheng-Hung (US)
KORAM, Kwaku K. (US)
KABAGAMBE, Benjamin (US)
MA, Zhixun (US)
MCCAMY, James W. (US)
Title
(EN) OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURE THEREOF
(RU) ОПТОЭЛЕКТРОННОЕ УСТРОЙСТВО И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ
Abstract
(EN)
FIELD: optics; electrical engineering. SUBSTANCE: optoelectronic device (10) comprises first substrate (12) having first surface (14) and second surface (16), optoelectronic coating (17) located above second surface (16) and containing underlying layer (18), located above second surface (16), first conductive layer (20) located above underlying layer (18), top layer (22) located above first conductive layer (20), semiconductor layer (24) located above first conductive layer (20), and second conductive layer (26) located above semiconductor layer (24). First conductive layer (20) contains tin oxide and a dopant additive, which is tungsten, and/or top layer (22) includes buffer layer (42), which contains tin oxide and at least one material selected from the group consisting of: zinc, indium, gallium and magnesium. EFFECT: invention provides an optoelectronic device with a conductive layer of high conductivity with high light transmission and light scattering. 12 cl, 5 dwg

(RU)
Оптоэлектронное устройство (10) содержит первую подложку (12), имеющую первую поверхность (14) и вторую поверхность (16), оптоэлектронное покрытие (17), расположенное поверх второй поверхности (16) и содержащее подстилающий слой (18), расположенный поверх второй поверхности (16), первый проводящий слой (20), расположенный поверх подстилающего слоя (18), верхний слой (22), расположенный поверх первого проводящего слоя (20), полупроводниковый слой (24), расположенный поверх первого проводящего слоя (20), и второй проводящий слой (26), расположенный поверх полупроводникового слоя (24). Первый проводящий слой (20) содержит оксид олова и допирующую добавку, представляющую собой вольфрам, и/или верхний слой (22) включает буферный слой (42), который содержит оксид олова и по меньшей мере один материал, выбранный из группы, состоящей из: цинка, индия, галлия и магния. Изобретение обеспечивает получение оптоэлектронного устройства с проводящим слоем повышенной проводимости с высокой светопроницаемостью и светорассеянием. 2 н. и 10 з.п. ф-лы, 5 ил.