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1. (WO2016068713) LOW-TEMPERATURE FORMATION OF THIN-FILM STRUCTURES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/068713    International Application No.:    PCT/NL2015/050761
Publication Date: 06.05.2016 International Filing Date: 30.10.2015
IPC:
H01L 21/20 (2006.01), H01L 21/02 (2006.01)
Applicants: TECHNISCHE UNIVERSITEIT DELFT [NL/NL]; Stevinweg 1 NL-2628 CN Delft (NL)
Inventors: ISHIHARA, Ryoichi; (NL).
VAN DER ZWAN, Michiel; (NL).
TRIFUNOVIC, Miki; (NL)
Agent: DE VRIES & METMAN; Overschiestraat 180 NL-1062 XK Amsterdam (NL)
Priority Data:
1041025 30.10.2014 NL
2013715 31.10.2014 NL
Title (EN) LOW-TEMPERATURE FORMATION OF THIN-FILM STRUCTURES
(FR) FORMATION À BASSE TEMPÉRATURE DE STRUCTURES EN COUCHES MINCES
Abstract: front page image
(EN)Methods for low-temperature formation of one or more thin-film semiconductor structures on a substrate are described wherein the method comprises the steps of: forming a (poly)silane layer over a substrate; transforming one or more parts of said (poly)silane layer in one or more thin-film solid-state semiconductor structures by exposing said one or more parts with light from an UV source.
(FR)L'invention concerne des procédés de formation à basse température d'une ou de plusieurs structures semiconductrices en couches minces sur un substrat, lequel procédé comprend les étapes consistant à : former une couche de (poly)silane sur un substrat ; transformer une ou plusieurs parties de ladite couche de (poly)silane en une ou plusieurs structures semiconductrices en couches minces en exposant ladite ou lesdites parties à une lumière provenant d'une source d'UV.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)