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1. (WO2014175740) METHOD OF FORMING SILICON ON A SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/175740    International Application No.:    PCT/NL2014/050275
Publication Date: 30.10.2014 International Filing Date: 28.04.2014
IPC:
C30B 7/00 (2006.01), C30B 29/06 (2006.01), H01L 21/02 (2006.01)
Applicants: TECHNISCHE UNIVERSITEIT DELFT [NL/NL]; Stevinweg 1 NL-2628 CN Delft (NL)
Inventors: ISHIHARA, Ryoichi; (NL).
TRIFUNOVIC, Miki; (NL).
VAN DER ZWAN, Michiel; (NL)
Agent: METMAN, Karel Johannes; Overschiestraat 180 NL-1062 XK Amsterdam (NL)
Priority Data:
2010713 26.04.2013 NL
Title (EN) METHOD OF FORMING SILICON ON A SUBSTRATE
(FR) PROCÉDÉ DE FORMATION DE SILICIUM SUR UN SUBSTRAT
Abstract: front page image
(EN)A method for forming a silicon layer using a liquid silane compound is described wherein said method comprises the steps of forming a first layer on a substrate, preferably a flexible substrate, said first layer comprising a (poly)silane; and, irradiating said first light ight comprising one or more wavelength within the range between 200 and 400 nm for transforming said polysilane in silicon, preferably amorphous silicon or polysilicon.
(FR)L'invention porte sur un procédé de formation d'une couche de silicium par utilisation d'un composé silane liquide, ledit procédé comprenant les étapes de formation d'une première couche sur un substrat, de préférence un substrat souple, ladite première couche comprenant un (poly)silane ; et l'exposition de ladite première couche à une lumière comprenant une ou plusieurs longueurs d'onde comprises dans la gamme de 200 à 400 nm pour transformer ledit polysilane en silicium, de préférence en silicium amorphe ou en polysilicium.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)