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1. WO2021020465 - METHOD FOR MANUFACTURING SOLAR CELL, SOLAR CELL, SOLAR CELL DEVICE, AND SOLAR CELL MODULE

Publication Number WO/2021/020465
Publication Date 04.02.2021
International Application No. PCT/JP2020/029125
International Filing Date 29.07.2020
IPC
H01L 31/0224 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 31/0463 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
0445including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
0463characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
H01L 31/0465 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
0445including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
0465comprising particular structures for the electrical interconnection of adjacent PV cells in the module
H01L 31/05 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0747 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0745comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
0747comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
CPC
H01L 31/0224
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 31/0463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
0445including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
0463characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
H01L 31/0465
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
0445including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
0465comprising particular structures for the electrical interconnection of adjacent PV cells in the module
H01L 31/05
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0747
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0745comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
0747comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
Y02E 10/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
Applicants
  • 株式会社カネカ KANEKA CORPORATION [JP]/[JP]
Inventors
  • 中村 淳一 NAKAMURA Junichi
Agents
  • 新山 雄一 NIIYAMA Yuichi
  • 加藤 竜太 KATO Ryuta
Priority Data
2019-14079331.07.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR MANUFACTURING SOLAR CELL, SOLAR CELL, SOLAR CELL DEVICE, AND SOLAR CELL MODULE
(FR) PROCÉDÉ DE FABRICATION DE CELLULE SOLAIRE, CELLULE SOLAIRE, DISPOSITIF DE CELLULE SOLAIRE ET MODULE DE CELLULE SOLAIRE
(JA) 太陽電池セルの製造方法、太陽電池セル、太陽電池デバイスおよび太陽電池モジュール
Abstract
(EN)
Provided is a method for manufacturing a solar cell with which cost can be reduced. This method for manufacturing a solar cell comprises: a step for forming a series of transparent electrode layer material films on electroconductive semiconductor layers 25, 35 on the reverse surface side of a substrate 11; a step for forming metal electrode layers 29, 39 on the transparent electrode layer material films; a step for forming insulation layers 41 covering the entirety of the metal electrode layers 29 except for a first non-insulation region, and insulation layers 42 covering the entirety of the metal electrode layers 39 excluding a second non-insulation region; and a step for forming patterned transparent electrode layers 28, 38 and leaving the insulation layers 41, 42 using an etching technique in which the insulation layers 41, 42 serve as masks. In the insulation layer formation step, the first non-insulation region positioned on a first straight line extending in a first direction is formed in the insulation layers 41, and the second non-insulation region positioned on a second straight line, different from the first straight line, extending in the first direction is formed in the insulation layers 42.
(FR)
L'invention concerne un procédé de fabrication de cellule solaire dont le coût peut être réduit. Ce procédé de fabrication de cellule solaire comprend les étapes consistant à : former une série de films de matériau de couche d'électrode transparente sur des couches à semi-conducteurs électroconductrices (25, 35) sur le revers d'un substrat (11) ; former des couches d'électrode métallique (29, 39) sur les films de matériau de couche d'électrode transparente ; former des couches d'isolation (41) recouvrant l'ensemble des couches d'électrode métallique (29) à l'exception d'une première région de non-isolation, et des couches d'isolation recouvrant l'ensemble des couches d'électrode métalliques à l'exclusion d'une seconde région de non-isolation ; et former des couches d'électrode transparentes à motifs (28, 38) et laisser les couches d'isolation (41, 42) à l'aide d'une technique de gravure dans laquelle les couches d'isolation (41, 42) jouent le rôle de masques. Dans l'étape consistant à former des couches d'isolation, la première région de non-isolation positionnée sur une première ligne droite s'étendant dans une première direction est formée dans les couches d'isolation (41), et la seconde région de non-isolation positionnée sur une seconde ligne droite, différente de la première ligne droite, s'étendant dans la première direction est formée dans les couches d'isolation (42).
(JA)
低コスト化が可能な太陽電池セルの製造方法を提供する。太陽電池セルの製造方法は、基板11の裏面側における導電型半導体層25,35上に、一連の透明電極層材料膜を形成する工程と、透明電極層材料膜上に金属電極層29,39を形成する工程と、金属電極層29を第1非絶縁領域を除いて全体的に覆う絶縁層41、および金属電極層39を第2非絶縁領域を除いて全体的に覆う絶縁層42を形成する工程と、絶縁層41,42をマスクとするエッチング法を用いて、パターン化された透明電極層28,38を形成し、絶縁層41,42を残す工程とを含み、絶縁層形成工程では、絶縁層41において第1方向に延びる第1直線上に配置される第1非絶縁領域を形成し、絶縁層42において第1方向に延びる第1直線と異なる第2直線上に配置される第2非絶縁領域を形成する。
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