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1. MX2017011719 - DISPOSITIVO OPTOELECTRÓNICO Y PROCEDIMIENTO PARA ELABORARLO.

Office Mexico
Application Number 2017011719
Application Date 12.09.2017
Publication Number 2017011719
Publication Date 30.01.2018
Publication Kind A
IPC
H01L 51/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
CPC
C03C 17/3417
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
3411with at least two coatings of inorganic materials
3417all coatings being oxide coatings
C03C 17/36
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
C03C 17/40
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
40all coatings being metal coatings
C23C 16/407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
407of zinc, germanium, cadmium, indium, tin, thallium or bismuth
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/022466
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
Applicants VITRO, S.A.B. DE C.V.
Inventors James W. MCCAMY
Benjamin KABAGAMBE
Zhixun MA
Cheng-hung HUNG
Gary J. NELIS
Kwaku K. KORAM
Priority Data 14/963,736 12.03.2015 US
14/963,778 12.03.2015 US
14/963,799 12.03.2015 US
14/963,832 12.03.2015 US
62/131,938 12.03.2015 US
Title
(ES) DISPOSITIVO OPTOELECTRÓNICO Y PROCEDIMIENTO PARA ELABORARLO.
Abstract
(EN)
An optoelectronic device (10) includes a first substrate (12) having a first surface (14) and a second surface (16); an underlayer (18) located over the second surface (16); a first conductive layer (20) over the underlayer (18); an overlayer (22) over the first conductive layer (20); a semiconductor layer (24) over the first conductive layer (20); and a second conductive layer (26) over the semiconductor layer (24). The first conductive layer (20) includes a conductive oxide and at least one dopant selected from the group consisting of tungsten, molybdenum, niobium, and fluorine; and/or the overlayer (22) includes a buffer layer (42) including tin oxide and at least one material selected from the group consisting of zinc, indium, gallium, and magnesium.