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1. MXMX/a/2007/010868 - A METHOD FOR SPATIALLY INTERRETING ELECTROMAGNETIC DATA USING MULTIPLE FREQUENCIES

Office Mexico
Application Number MX/a/2007/010868
Application Date 05.09.2007
Publication Number MX/a/2007/010868
Publication Date 15.02.2008
Publication Kind A
IPC
G01V 9/00
GPHYSICS
01MEASURING; TESTING
VGEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
9Prospecting or detecting by methods not provided for in groups G01V1/-G01V8/115
Applicants EXXONMOBIL UPSTREAM RESEARCH COMPANY.*
Inventors James J. Carazzone
Olivier M. Burtz
Dmitriy A.Pavlov
Agents JAIME DELGADO R.*
Priority Data 60/659,251 07.03.2005 US
Title
(EN) A METHOD FOR SPATIALLY INTERRETING ELECTROMAGNETIC DATA USING MULTIPLE FREQUENCIES
(ES) UN METODO PARA INTERPRETAR ESPACIALMENTE DATOS ELECTROMAGNETICOS UTILIZANDO FRECUENCIAS MULTIPLES
Abstract
(EN)
Method for removing effects of shallow resistivity structures in electromagnetic survey data to produce a low frequency resistivity anomaly map, or alternatively imaging resistivity structures at their correct depth levels. The method involves solving Maxwell's electromagnetic field equations by either forward modeling or inversion, and requires at least two survey data sets, one taken at the source frequency selected to penetrate to a target depth, the other a higher frequency able to penetrate only shallow depths. Method for removing effects of shallow resistivity structures in electromagnetic survey data to produce a low frequency resistivity anomaly map, or alternatively imaging resistivity structures at their correct depth levels. The method involves solving Maxwell's electromagnetic field equations by either forward modeling or inversion, and requires at least two survey data sets, one taken at the source frequency selected to penetrate to a target depth, the other a higher frequency able to penetrate only shallow depths. Aluminum free high electron mobility transistors (HEMTs) and methods of fabricating aluminum free HEMTs are provided. In some embodiments, the aluminum free HEMTs include an aluminum free Group III-nitride barrier layer, an aluminum free Group III-nitride channel layer on the barrier layer and an aluminum free Group III-nitride cap layer on the channel layer.

(ES)
Método para remover los efectos de las estructuras de resistividad poco profunda en datos de estudio electromagnético para producir un mapa de anomalía de resistividad de frecuencia baja, o alternativamente formar imágenes de las estructuras de resistividad en sus niveles de profundidad correcta. El método involucra resolver las ecuaciones de campo electromagnético de Maxwell por modelaje directo inversión, y requiere por lo menos dos conjuntos de datos de estudio, uno tomado en la frecuencia de fuente seleccionada para penetrar una profundidad objetivo, el otro, una frecuencia más alta capaz de penetrar sólo profundidades poco profundas.

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