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1. (KR1020080033275) DOUBLE SIDE POLISHING METHOD FOR WAFER

Office : Republic of Korea
Application Number: 1020087001296 Application Date: 16.01.2008
Publication Number: 1020080033275 Publication Date: 16.04.2008
Publication Kind : A
IPC:
B24B 37/00
B24B 57/00
B24B 37/04
H01L 21/304
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
57
Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
04
designed for working plane surfaces
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
CPC:
B24B 37/08
H01L 21/02024
Applicants: SHIN-ETSU HANDOTAI CO., LTD.
Inventors: UENO JUNICHI
KOBAYASHI SYUICHI
Priority Data: 2005 2005209216 19.07.2005 JP
Title: (EN) DOUBLE SIDE POLISHING METHOD FOR WAFER
Abstract: front page image
(EN) A double side polishing method for a wafer, for simultaneously polishing both sides of the wafer held by a carrier, with the wafer clamped between upper and lower surface plates to which polishing cloth is applied and with slurry supplied between the upper and lower surface plates from a plurality of slurry supply holes provided in the upper surface plate. When both sides of the wafer are polished, the amount of slurry supplied from slurry supply holes provided outside the center of rotation of the upper surface plate is set larger than the amount of slurry supplied from slurry supply holes provided inside the center. As a result, the amount of polishing of the outer circumferential portion of the wafer is regulated to suppress outer circumferential sagging of the wafer. Occurrence of outer circumferential sagging of a wafer when its both sides are polished is thus suppressed. ┬ęKIPO&WIPO 2008
Also published as:
EP1918069US20090124175CN101223006WO/2007/010717