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1. (KR1020080027390) COMBINED ETCHING AND DOPING MEDIA FOR SILICON DIOXIDE LAYERS AND SUBJACENT SILICON

Office : Republic of Korea
Application Number: 1020087003459 Application Date: 12.02.2008
Publication Number: 1020080027390 Publication Date: 26.03.2008
Publication Kind : A
IPC:
H01L 21/225
C03C 15/00
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225
using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
15
Surface treatment of glass, not in the form of fibres or filaments, by etching
CPC:
C09K 13/04
C03C 17/23
C03C 17/3411
C03C2218/33
C09K 13/06
H01L 31/1804
Y02E 10/547
Y02P 70/521
Applicants: MERCK PATENT GMBH
Inventors: KUEBELBECK ARMIN
STOCKUM WERNER
Priority Data: 2005 1005032807 12.07.2005 DE
Title: (EN) COMBINED ETCHING AND DOPING MEDIA FOR SILICON DIOXIDE LAYERS AND SUBJACENT SILICON
Abstract: front page image
(EN) The invention relates to HF/fluoride-free etching and doping media which are suitable for etching silicon dioxide layers and doping subjacent silicon layers. The invention also relates to a method in which said media are used. ┬ęKIPO&WIPO 2008
Also published as:
EP1902000JP2009501436US20080210298CN101218184MYPI 20063231IN592/KOLNP/2008
WO/2007/006381