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1. KR1020080019199 - METHOD OF FILM FORMATION, FILM FORMATION APPARATUS, PERMANENT MAGNET, AND PROCESS FOR PRODUCING PERMANENT MAGNET

Office Republic of Korea
Application Number 1020077019699
Application Date 28.08.2007
Publication Number 1020080019199
Publication Date 03.03.2008
Grant Number 1013168030000
Grant Date 11.10.2013
Publication Kind B1
IPC
C23C 14/54
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
54Controlling or regulating the coating process
C23C 14/22
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
H01F 10/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
08characterised by magnetic layers
10characterised by the composition
12being metals or alloys
H01F 41/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
41Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
14for applying magnetic films to substrates
20by evaporation
Applicants ULVAC, INC.
가부시키가이샤 알박
Inventors NAGATA HIROSHI
나카타, 히로시
SHINGAKI YOSHINORI
싱아키, 요시노리
Agents 이수완
이 성 규
조진태
윤종섭
Priority Data JP-P-2005-00080021 18.03.2005 JP
Title
(EN) METHOD OF FILM FORMATION, FILM FORMATION APPARATUS, PERMANENT MAGNET, AND PROCESS FOR PRODUCING PERMANENT MAGNET
(KO) 성막 방법, 성막 장치, 영구자석 및 영구자석의 제조 방법
Abstract
(EN)
A film is formed at a high rate on the surface of an iron-boron-rare-earth-metal magnet having a given shape, while effectively using dysprosium or terbium as a film-forming material. Thus, productivity is improved and a permanent magnet can be produced at low cost. A permanent magnet is produced through a film formation step in which a film of dysprosium is formed on the surface of an iron-boron-rare-earth-metal magnet of a given shape and a diffusion step in which the magnet coated is subjected to a heat treatment at a given temperature to cause the dysprosium deposited on the surface to diffuse into the grain boundary phase of the magnet. The film formation step comprises: a first step in which a treating chamber where this film formation is performed is heated to vaporize dysprosium which has been disposed in this treating chamber and thereby form a dysprosium vapor atmosphere having a given vapor pressure in the treating chamber; and a second step in which a magnet kept at a temperature lower than the internal temperature of the treating chamber is introduced into this treating chamber and the dysprosium is selectively deposited on the magnet surface based on a temperature difference between the treating chamber and the magnet until the magnet temperature reaches a given value. ©KIPO&WIPO 2008

(KO)
성막 재료인 Dy, Tb를 유효하게 이용하면서, 소정 형상의 철-붕소-희토류계의 자석 표면에 고속으로 성막시켜 생산성이 향상되고, 저비용으로 영구자석을 제조할 수 있도록한다. 소정 형상의 철-붕소-희토류계의 자석 표면에 Dy를 성막하는 성막 공정과, 소정 온도하에서 열처리를 수행하여 표면에 성막된 Dy를 자석의 결정립계상으로 확산시키는 확산 공정으로 영구자석을 제조한다. 이 경우, 성막 공정은, 이 성막 공정을 실시하는 처리실을 가열하여 이 처리실 내에 미리 배치한 Dy를 증발시켜 소정의 증기압을 가지는 Dy 증기 분위기를 처리실 내에 형성하는 제1 공정과, 처리실 내의 온도보다 낮게 유지한 자석을 이 처리실로 반입하여 이 자석이 소정 온도에 이르기까지 처리실 내와 자석 사이의 온도차에 의해 자석 표면에 Dy를 선택적으로 부착 퇴적시키는 제2 공정으로 구성된다.