Processing

Please wait...

Settings

Settings

Goto Application

1. KR1020070121756 - SUBSTRATE PROCESSING PLATFORM ALLOWING PROCESSING IN DIFFERENT AMBIENTS

Office
Republic of Korea
Application Number 1020077023721
Application Date 16.10.2007
Publication Number 1020070121756
Publication Date 27.12.2007
Publication Kind A
IPC
H01L 21/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CPC
H01L 21/67207
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
67207comprising a chamber adapted to a particular process
H01L 21/67115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67115mainly by radiation
H01L 21/67778
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
677for conveying, e.g. between different workstations
67763the wafers being stored in a carrier, involving loading and unloading
67778involving loading and unloading of waers
Applicants APPLIED MATERIALS INC.
어플라이드 머티어리얼스, 인코포레이티드
Inventors YOKOTA YOSHITAKA
요코타, 요시타카
MORITZ KIRK
모리츠, 키르크
MA KAI
마, 카이
CHANG WEN
창, 웬
PARASIRIS ANASTANSIOS
파라시리스, 아나스탄시오스
SHARMA ROHIT
샤르마, 로힛
TJANDRA AGUS
티잔드라, 아구스
ACHUTHARAMAN VENDAPURAM
아추타라맨, 벤다푸람
RAMAMURTHY SUNDAR
라마무르씨, 선다르
THAKUR RANDHIR
타쿠르, 란드히르
Agents 남상선
Priority Data 11114250 25.04.2005 US
Title
(EN) SUBSTRATE PROCESSING PLATFORM ALLOWING PROCESSING IN DIFFERENT AMBIENTS
(KO) 상이한 기압에서 공정 처리가 가능한 기판 처리 플랫폼
Abstract
(EN) A semiconductor wafer processing system (40) including a factory interface (26) operating at atmospheric pressure and mounting plural wafer cassettes and further including plural wafer processing chambers (42, 44) mounted on a frame (16) and connected to the factory interface through respective slit valves. A robot in the factory interface can transfer wafers (32) between the cassettes and the processing chambers. At least one of the processing chambers can operate at reduced pressure and is pumped by a vacuum pump (46) mounted on the frame. The processing chamber may be a rapid thermal processing chamber (52) including an array of lamps (66) irradiating a processing volume (100) through a window (60). The lamphead is vacuum pumped to a pressure approximating that in the processing volume. A multi-step process may be performed with different pressures. The invention also includes a wafer access port (202) of a thermal processing chamber which can flow (210) an inert gas in outside of the slit valve to thereby form a gas curtain outside of the opened slit (206) to prevent the out flow of toxic processing gases. ©KIPO&WIPO 2008
(KO) 반도체 웨이퍼 처리 시스템(40)은 대기압에서 작동하고 복수의 웨이퍼 카세트가 장착되는 팩토리 인터페이스(26) 및 프레임(16) 상에 장착되고 각각의 슬릿 밸브를 통해 팩토리 인터페이스에 연결되는 복수의 웨이퍼 처리 챔버(42,44)를 포함한다. 팩토리 인터페이스 내의 로봇은 카세트와 처리 챔버 사이로 웨이퍼(26)를 이송할 수 있다. 적어도 하나의 처리 챔버는 감소된 압력 하에서 작동할 있고 프레임 상에 장착된 진공 펌프(46)에 의해 펌핑된다. 처리 챔버는 윈도우(60)를 통해 처리 공간(100)을 조사하는 램프(66) 열을 포함하는 급속 열 처리 챔버(52)일 수 있다. 램프 헤드는 처리 공간 내의 압력과 유사한 압력으로 진공 펌핑된다. 다단계 처리 공정이 상이한 압력에서 수행될 수 있다. 본 발명은 또한 슬릿 밸브의 외측으로 불활성 가스를 유동(210)시킬 수 있는 열 처리 챔버의 웨이퍼 접근 포트(202)를 포함함으로써 독성 처리 가스의 외측 흐름을 방지하기 위한 개방된 슬릿(206) 외측으로의 가스 커튼을 형성한다.
Related patent documents
EP6750298This application is not viewable in PATENTSCOPE because the national phase entry has not been published yet or the national entry is issued from a country that does not share data with WIPO or there is a formatting issue or an unavailability of the application.