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1. KR1020070112190 - METHOD FOR FORMING A RUTHENIUM METAL LAYER ON A PATTERNED SUBSTRATE

Office Republic of Korea
Application Number 1020077021122
Application Date 14.09.2007
Publication Number 1020070112190
Publication Date 22.11.2007
Grant Number 1010692990000
Grant Date 05.10.2011
Publication Kind B1
IPC
H01L 21/768
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
C23C 16/02
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
02Pretreatment of the material to be coated
H01L 23/532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
C23C 16/455
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Applicants TOKYO ELECTRON LIMITED
동경 엘렉트론 주식회사
Inventors MATSUDA TSUKASA
마츠다 즈카사
Agents 김태홍
신정건
Priority Data 10/907,022 16.03.2005 US
Title
(EN) METHOD FOR FORMING A RUTHENIUM METAL LAYER ON A PATTERNED SUBSTRATE
(KO) 패터닝된 기판상에 루테늄 금속층을 형성하기 위한 방법
Abstract
(EN)
A method (300) for forming a ruthenium metal layer (560) includes providing a patterned substrate (25, 125, 500) in a process chamber (10, 110) of a deposition system(1, 100), where the patterned substrate (25, 125, 500) contains one or more vias or trenches, or combinations thereof, depositing a first ruthenium metal layer (540) on the substrate (25, 125, 500) in an atomic layer deposition process, and depositing a second ruthenium metal layer (550) on the first ruthenium metal layer (540) in a thermal chemical vapor deposition process. The deposited ruthenium metal layer (560) can be used as a diffusion barrier layer, a seed layer for electroplating, or both. ©KIPO&WIPO 2008

(KO)
루테늄 금속층(560)을 형성하기 위한 방법(300)은 하나 이상의 비아, 트렌치, 또는 그 조합을 갖는 패터닝된 기판(25, 125, 500)을 증착 시스템(1, 100)의 처리 챔버(10, 110)에 제공하는 공정과, 원자층 증착 처리에 의해 제1 루테늄 금속층(540)을 기판(25, 125, 500)에 증착하는 공정과, 열 화학적 기상 증착 처리에 의해 제1 루테늄 금속층(540)에 제2 루테늄 금속층(550)을 증착하는 공정을 포함한다. 증착된 루테늄 금속층(560)은 확산 장벽층, 전기도금을 위한 시드층, 또는 이 2개의 층으로서 사용될 수 있다.

Also published as
EP6735617