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1. KR1020200083324 - HYDROCARBON THIN FILM, HYDROCARBON THIN FILM MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE INCLUDING HYDROCARBON THIN FILM

Office
Republic of Korea
Application Number 1020190176443
Application Date 27.12.2019
Publication Number 1020200083324
Publication Date 08.07.2020
Publication Kind A
IPC
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/8234
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 29/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
CPC
H01L 21/02115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02115the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
H01L 21/02118
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02118carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
H01L 21/02274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
02274in the presence of a plasma [PECVD]
H01L 21/02315
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02296characterised by the treatment performed before or after the formation of the layer
02299pre-treatment
02312treatment by exposure to a gas or vapour
02315treatment by exposure to a plasma
H01L 21/02527
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02527Carbon, e.g. diamond-like carbon
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Applicants 충남대학교산학협력단
울산과학기술원
THE INDUSTRY amp; ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC)
UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
Inventors KIM EUI TAE
KIM DONG OK
LEE ZONG HOON
김의태
김동욱
이종훈
Agents 원대규
Priority Data 1020180173522 31.12.2018 KR
Title
(EN) HYDROCARBON THIN FILM, HYDROCARBON THIN FILM MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE INCLUDING HYDROCARBON THIN FILM
(KO) 탄화수소 박막, 탄화수소 박막의 제조방법 및 탄화수소 박막을 포함하는 반도체 소자
Abstract
(EN)
According to the present invention, provided are a hydrocarbon thin film, a manufacturing method thereof, and a semiconductor device employing the same. The hydrocarbon thin film has a dielectric constant which is considerably higher than an Hf or Zr-based oxide thin film as well as an SiO_2 thin film based on a high dielectric property while having excellent uniformity of the thin film, and at the same time having a very low leakage current and showing a high dielectric strength property, thereby being able to achieve excellent performance by being applied to a semiconductor device having a node of no more than 10 nm. The hydrocarbon thin film has an amorphous structure, a dielectric constant not less than 10, a secondary-ion mass spectrometry (SIMS) relative intensity ratio between hydrogen and carbon is 4 to 30, and binding energy (eV) movement widths before and after a surface treatment are 0.5 eV or less, which is conducted under one time condition among 5 to 20 seconds using argon (AR+) plasma etching in which a binding energy peak existing within from 280 to 290 eV over a carbon 1s spectrum of X-ray photoelectron spectroscopy is 1 keV in intensity. COPYRIGHT KIPO 2021

(KO)
고유전성을 바탕으로 SiO 박막은 물론 Hf 또는 Zr 기반의 산화물 박막보다도 유전상수가 현저히 높으면서도 박막의 균일성이 우수하고, 동시에 누설전류가 매우 낮고, 높은 유전강도 특성을 나타내어 10nm 노드 이하의 반도체 소자에 적용되어 우수한 성능을 구현할 수 있는 탄화수소 박막으로서, 비정질 구조를 갖고, 유전상수가 10 이상이며, 수소와 탄소의 이차이온 질량분석(SIMS: secondary-ion mass spectrometry) 상대 강도 비가 4 내지 30이고, XPS(X-ray photoelectron spectroscopy)의 탄소 1s 스펙트럼 상 280eV 내지 290eV 중에 존재하는 결합 에너지 피크(peak)가 1keV 세기의 아르곤(Ar+) 플라즈마 에칭으로 5초 내지 20초 중 어느 하나의 시간 조건 하에서 표면 처리한 전후의 결합 에너지(eV) 이동폭이 0.5eV 이하인 탄화수소 박막 및 이의 제조방법과 이를 적용한 반도체 소자를 제공한다. 2

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