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1. KR1020190103309 - 단결정 인상 장치의 클리닝 장치, 클리닝 방법

Office Republic of Korea
Application Number 1020197022919
Application Date 02.02.2018
Publication Number 1020190103309
Publication Date 04.09.2019
Publication Kind A
IPC
C30B 15/20
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
B08B 1/00
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
1Cleaning by methods involving the use of tools, brushes, or analogous members
B08B 9/043
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
9Cleaning hollow articles by methods or apparatus specially adapted thereto
02Cleaning pipes or tubes or systems of pipes or tubes
027Cleaning the internal surfaces; Removal of blockages
04using cleaning devices introduced into and moved along the pipes
043moved by externally powered mechanical linkage, e.g. pushed or drawn through the pipes
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 35/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
35Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
CPC
C30B 15/20
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
B08B 1/006
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
1Cleaning by methods involving the use of tools, brushes, or analogous members
001characterised by the type of cleaning tool
006Wipes
B08B 1/008
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
1Cleaning by methods involving the use of tools, brushes, or analogous members
008using translating operative members
B08B 9/0436
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
9Cleaning hollow articles by methods or apparatus specially adapted thereto
02Cleaning pipes or tubes or systems of pipes or tubes
027Cleaning the internal surfaces; Removal of blockages
04using cleaning devices introduced into and moved along the pipes
043moved by externally powered mechanical linkage, e.g. pushed or drawn through the pipes
0436provided with mechanical cleaning tools, e.g. scrapers, with or without additional fluid jets
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 35/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
35Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure
Applicants 가부시키가이샤 사무코
Inventors 오키타 켄지
Agents 남승희
Priority Data PCT/JP2017/003796 02.02.2017 JP
Title
(KO) 단결정 인상 장치의 클리닝 장치, 클리닝 방법
Abstract
(KO)
단결정 인상 장치(1) 안을 클리닝하는 클리닝 장치(10)로서, 풀 챔버(1a) 내에 삽입 가능한 주 통부(11)와, 주 통부의 상부에 풀 챔버의 내면을 클리닝하는 내면 클리닝 기구(17)를 구비하고, 주 통부가, 그 내부에 와이어 하부의 시드 척을 퇴피 수납하는 퇴피 수납부(12)와, 주 통부의 하부에 복수 개의 연신 로드(13A∼13D)를 축 방향으로 이어서 늘임 가능하게 하는 계속 연신 기구(13)를 구비함으로써, 효율적으로 풀 챔버 내면 클리닝을 수행한다.