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1. KR1020180124942 - 전계 효과형 트랜지스터, 표시 소자, 화상 표시 장치, 및 시스템

Office
Republic of Korea
Application Number 1020187029916
Application Date 16.03.2017
Publication Number 1020180124942
Publication Date 21.11.2018
Grant Number 102210992
Grant Date 02.02.2021
Publication Kind B1
IPC
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
H01L 29/7869
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
7869having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
H01L 29/78606
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78606with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
H01L 29/78618
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78606with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
78618characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
G09G 2300/0439
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
2300Aspects of the constitution of display devices
04Structural and physical details of display devices
0439Pixel structures
Applicants 가부시키가이샤 리코
Inventors 우에다 나오유키
나카무라 유키
아베 유키코
마츠모토 신지
소네 유지
사오토메 료이치
아라에 사다노리
구사야나기 미네히데
Agents 김진회
김태홍
Priority Data JP-P-2016-055571 18.03.2016 JP
JP-P-2016-157920 10.08.2016 JP
Title
(KO) 전계 효과형 트랜지스터, 표시 소자, 화상 표시 장치, 및 시스템
Abstract
(KO) 게이트 전압을 인가하도록 구성된 게이트 전극, 전기 신호를 전달하도록 구성된 소스 전극 및 드레인 전극, 상기 소스 전극과 상기 드레인 전극 사이에 형성된 활성층, 및 상기 게이트 전극과 상기 활성층 사이에 형성된 게이트 절연층을 포함하는 전계 효과형 트랜지스터로서, 상기 활성층은, A층과 B층을 포함하는 적어도 두 종류의 산화물층을 포함하고, 상기 활성층은, 하기 조건 (1) 및 (2): 조건 (1): 상기 활성층이, 2층 이상의 A층을 포함하는 3층 이상의 산화물층을 포함하는 것, 및 조건 (2): 상기 A층의 밴드갭이 상기 B층의 밴드갭보다 작고, 상기 A층의 산소 친화력이 상기 B층의 산소 친화력과 같거나 그보다 높은 것 중 적어도 하나를 충족시키는 것인 전계 효과형 트랜지스터.