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1. KR1020180118708 - 패터닝 프로세스 파라미터를 결정하는 방법 및 장치

Office Republic of Korea
Application Number 1020187027663
Application Date 01.03.2017
Publication Number 1020180118708
Publication Date 31.10.2018
Grant Number 102151012
Grant Date 03.09.2020
Publication Kind B1
IPC
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G01B 3/14
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
3Instruments as specified in the subgroups and characterised by the use of mechanical measuring means
14Templates for checking contours
G03F 9/00
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
H01L 21/308
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
308using masks
H01L 21/66
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
CPC
G03F 7/70633
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70633Overlay
G01B 3/14
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
3Instruments as specified in the subgroups and characterised by the use of mechanical measuring means
14Templates for checking contours
G01N 21/8851
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
G01N 21/9501
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
95characterised by the material or shape of the object to be examined
9501Semiconductor wafers
G03F 7/70683
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70683using process control mark, i.e. specific mark designs
G03F 9/7003
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
70for microlithography
7003Alignment type or strategy, e.g. leveling, global alignment
Applicants 에이에스엠엘 네델란즈 비.브이.
Inventors 반 리스트 아드리안 요한
치애트마스 아나그노스티스
하이넨 폴 크리스티안
맥 나마라 엘리엇 제라드
버마 알록
디우베스 토마스
크라머 휴고 어거스티누스 조셉
Agents 유미특허법인
Priority Data 62/301,880 01.03.2016 US
62/435,630 16.12.2016 US
62/435,649 16.12.2016 US
62/435,662 16.12.2016 US
62/435,670 16.12.2016 US
01624589 25.07.1932 US
Title
(KO) 패터닝 프로세스 파라미터를 결정하는 방법 및 장치
Abstract
(KO)
패터닝 프로세스의 오버레이를 결정하는 방법으로서, 유닛 셀의 하나 이상의 물리적 인스턴스에 의해 재지향된 방사선의 검출된 표현을 획득하는 단계 - 상기 유닛 셀은 오버레이의 공칭 값에서 기하학적 대칭을 가지고, 상기 방사선의 검출된 표현은, 기판 상의 빔 스폿이 상기 유닛 셀의 하나 이상의 물리적 인스턴스로 채워지도록 상기 기판을 방사선 빔으로 조명함으로써 획득된 것임 -; 및 그리고 검출된 방사선 표현으로부터의 광학 특성 값으로부터, 동일한 광학 특성 값으로부터 역시 획득가능한, 상기 유닛 셀에 대한 제 2 오버레이와 별개로, 상기 유닛 셀에 대한 제 1 오버레이의 값을 결정하는 단계 - 상기 제 1 오버레이는 상기 제 2 오버레이와 상이한 방향이거나 상기 유닛 셀 중 상기 제 2 오버레이와 상이한 조합의 부분들 사이에 있는, 오버레이 결정 방법.