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1. KR1020170051530 - 박형 웨이퍼 핸들링을 위한 다중 본딩 층

Office
Republic of Korea
Application Number 1020177011582
Application Date 05.08.2011
Publication Number 1020170051530
Publication Date 11.05.2017
Grant Number 1019135220000
Grant Date 30.10.2018
Publication Kind B1
IPC
H01L 21/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
B32B 38/00
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
38Ancillary operations in connection with laminating processes
B32B 38/10
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
38Ancillary operations in connection with laminating processes
10Removing layers, or parts of layers, mechanically or chemically
B32B 43/00
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
43Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
H01L 21/683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
H01L 23/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
CPC
H01L 21/6835
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
B32B 38/0008
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
38Ancillary operations in connection with laminating processes
0008Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation
B32B 38/10
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
38Ancillary operations in connection with laminating processes
10Removing layers, or parts of layers, mechanically or chemically
B32B 43/006
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
43Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
006Delaminating
H01L 21/2007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
2003Characterised by the substrate
2007Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
H01L 21/6836
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
6836Wafer tapes, e.g. grinding or dicing support tapes
Applicants 브레우어 사이언스 인코포레이션
브레우어 사이언스 인코포레이션
Inventors 풀리가다, 라마
종, 싱-푸
플래임, 토니, 디.
풀리가다, 라마
맥커천, 제레미
종, 싱-푸
플래임, 토니, 디.
맥커천, 제레미
Agents 강명구
강명구
김현석
Priority Data 13198294 04.08.2011 US
61/371,517 06.08.2010 US
Title
(KO) 박형 웨이퍼 핸들링을 위한 다중 본딩 층
Abstract
(KO) 반도체 기판들을 임시로 접합하는 다중 본딩 층 스킴이 제공된다. 본 발명의 본딩 스킴에서, 층들 중 적어도 하나가 반도체 기판과 직접 접촉하며, 스킴 내 적어도 2개의 층은 서로 직접 접촉한다. 본 발명은 다층 구조물 내 서로 다른 층들이 특정 기능을 수행함에 따른 몇 가지 공정 옵션을 제공한다. 더 중요하게는, 이는 열적 안정성을 더 높이고, 거친(harsh) 후면 공정 단계와의 호환성을 더 높이며, 캡슐화에 의해 웨이퍼의 전면 상의 범프를 보호하고, 디본딩 공정의 응력을 더 낮추며, 전면 상의 결함을 감소시킴으로써, 박형 웨이퍼 핸들링 솔루션의 성능을 개선할 것이다.