KR1020170048608 다중 유전체 게이트 스택을 갖는 III-V족 재료 활성 영역을 갖는 비-평면 반도체 디바이스

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Republic of Korea

Application Number 1020177010979

Application Date 12.06.2013

Publication Number 1020170048608

Publication Date 08.05.2017

Grant Number 1019511310000

Grant Date 21.02.2019

Publication Kind B1

IPC

Applicants 인텔 코포레이션

Inventors 듀이, 길버트
라도사블리예비치, 마르코
필라리세티, 라비
추-쿵, 벤자민
무커지, 닐로이

Agents 양영준
백만기

Priority Data 13629154 27.09.2012 US

Title

(KO) 다중 유전체 게이트 스택을 갖는 III-V족 재료 활성 영역을 갖는 비-평면 반도체 디바이스

Abstract

(KO) 다중 유전체 게이트 스택들을 갖는 III-V족 재료 활성 영역들을 갖는 비-평면 반도체 디바이스들을 설명한다. 예를 들어, 반도체 디바이스는 기판 위에 배치되는 헤테로-구조체를 포함한다. 헤테로-구조체는 채널 영역을 갖는 3차원 III-V족 재료 바디를 포함한다. 소스 및 드레인 재료 영역은 3차원 III-V족 재료 바디 위에 배치된다. 트랜치는 소스 및 드레인 재료 영역에 배치되어 소스 영역을 드레인 영역으로부터 분리하고 채널 영역의 적어도 일부를 노출시킨다. 게이트 스택은 트랜치에 그리고 채널 영역의 노출된 부분 상에 배치된다. 게이트 스택은 제1 및 제2 유전체 층 및 게이트 전극을 포함한다.

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66	Types of semiconductor device
68	controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76	Unipolar devices
772	Field-effect transistors
78	with field effect produced by an insulated gate

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66	Types of semiconductor device
68	controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76	Unipolar devices
772	Field-effect transistors
775	with one-dimensional charge carrier gas channel, e.g. quantum wire FET

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66	Types of semiconductor device
68	controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76	Unipolar devices
772	Field-effect transistors
78	with field effect produced by an insulated gate

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29	Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66	Types of semiconductor device
68	controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76	Unipolar devices
772	Field-effect transistors
775	with one-dimensional charge carrier gas channel, e.g. quantum wire FET

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1. KR1020170048608 - 다중 유전체 게이트 스택을 갖는 III-V족 재료 활성 영역을 갖는 비-평면 반도체 디바이스