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1. KR1020160058907 - 스핀 제어 기구 및 스핀 디바이스

Office
Republic of Korea
Application Number 1020167010338
Application Date 29.10.2014
Publication Number 1020160058907
Publication Date 25.05.2016
Grant Number 1018272940000
Grant Date 08.02.2018
Publication Kind B1
IPC
B81B 5/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
5Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
H01L 29/82
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
82controllable by variation of the magnetic field applied to the device
H01L 35/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
H01L 37/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
37Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
CPC
H01L 43/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Details
B81B 5/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
5Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
H01L 23/3675
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
367Cooling facilitated by shape of device
3675characterised by the shape of the housing
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H02K 49/06
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
KDYNAMO-ELECTRIC MACHINES
49Dynamo-electric clutches; Dynamo-electric brakes
06of the synchronous type
Applicants 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코
고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코
더 유니버시티 오브 요크
더 유니버시티 오브 요크
Inventors 히로하타 아츠후미
히로하타 아츠후미
Agents 하영욱
하영욱
Priority Data JP-P-2013-227153 31.10.2013 JP
Title
(KO) 스핀 제어 기구 및 스핀 디바이스
Abstract
(KO)
스핀 제어 기구는 스핀부 및 제 1 채널부를 구비한다. 스핀부는 반전 가능 또는 회전 가능한 자기 모멘트를 갖는다. 제 1 채널부는 스핀부에 접촉해서 설치되고, 강자성 또한 절연체로 구성된다. 그리고, 제 1 채널부에 부여된 온도 구배에 의해 발생하는 스핀류를 사용하여 스핀부의 자기 모멘트의 방향을 제어한다.