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1. (KR1020150099764) 기판상에 절연 및/또는 장벽 층 또는 다중층을 제조하는 방법, 및 상기 방법을 구현하기 위한 디바이스

Office : Republic of Korea
Application Number: 1020157017293 Application Date: 27.11.2013
Publication Number: 1020150099764 Publication Date: 01.09.2015
Publication Kind : A
Prior PCT appl.: Application Number: ; Publication Number:WO2014083218 Click to see the data
IPC:
H01L 21/02
C23C 14/10
C23C 14/35
C23C 16/40
C23C 16/509
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
10
Glass or silica
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
35
by application of a magnetic field, e.g. magnetron sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
505
using radio frequency discharges
509
using internal electrodes
CPC:
H01J 37/3473
C01B 33/12
C04B 35/44
C23C 14/0057
C23C 14/081
C23C 14/10
C23C 14/3435
C23C 14/35
C23C 14/354
C23C 16/401
C23C 16/403
C23C 16/509
H01J 37/3405
H01J2237/3323
H01L 21/02145
H01L 21/02164
H01L 21/02178
H01L 21/022
H01L 21/02266
H01L 21/02274
H01L 31/0203
H01L 31/03926
H01L 31/03928
Y02E 10/541
Applicants: 아벵고아 솔라 뉴 테크놀로지 에스.아.
Inventors: 길 로스트라, 조지
리코 가비라, 빅토르
유베로 발렌시아, 프란시스코
에스피노스 만조로, 주안 페드로
로드리게즈 곤잘레스-엘리페, 어거스틴
산체스 코테존, 에밀리오
델가도 산체스, 호세 마리아
Agents: 김해중
Priority Data: 12380053.4 28.11.2012 EP
Title: (KO) 기판상에 절연 및/또는 장벽 층 또는 다중층을 제조하는 방법, 및 상기 방법을 구현하기 위한 디바이스
Abstract: front page image
(KO) 본 발명은 기판상에 장벽 및/또는 절연층을 준비하는 방법에 관한 것으로, 다음 단계를 포함하는 것을 특징으로 한다: (a) 기판을 세정하는 단계, (b) 샘플 홀더 상에 기판을 배치하여 진공 챔버 안에 삽입하는 단계, (c) 불활성 가스 및 반응성 가스를 상기 진공 챔버에 투입하는 단계, (d) 증착될 화합물의 적어도 하나의 양이온을 갖는 휘발성 전구체를 진공 챔버 안에 주입하는 단계, (e) 무선 주파수 소스를 활성화하고 하나의 마그네트론을 활성화하는 단계, (f) 플라즈마를 사용하여 휘발성 전구체를 분해하는 단계로서, 휘발성 전구체의 양이온과 반응성 가스 사이의 반응은 플라스마에 함유된 반응성 가스와 스퍼터링에 의해 발생하는 타겟으로부터의 양이온 사이의 반응과 동시에 발생하여, 기판상에 필름의 증착을 야기한다. 상기 방법을 실행하기 위한 디바이스도 또한 본 발명의 목적이다.
Also published as:
CN104955978US20150325418ES2542252WO/2014/083218