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1. KR1020150096492 - 정전척

Office
Republic of Korea
Application Number 1020157019021
Application Date 27.03.2014
Publication Number 1020150096492
Publication Date 24.08.2015
Grant Number 1016931870000
Grant Date 05.01.2017
Publication Kind B1
IPC
H01L 21/683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H02N 13/00
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
13Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
CPC
H01L 21/6833
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
6833Details of electrostatic chucks
H01L 21/67109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67109mainly by convection
H01L 21/6831
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
Applicants 토토 가부시키가이샤
토토 가부시키가이샤
Inventors 아나다 카즈키
아나다 카즈키
요시이 유이치
요시이 유이치
Agents 하영욱
하영욱
Priority Data JP-P-2013-072121 29.03.2013 JP
JP-P-2013-072122 29.03.2013 JP
2014064870 26.03.2014 JP
Title
(KO) 정전척
Abstract
(KO)
본 발명에 의한 정전척은 흡착 대상물을 적재하는 제 1 주면과, 상기 제 1 주면과는 반대측의 제 2 주면과, 상기 제 2 주면으로부터 상기 제 1 주면에 걸쳐서 설치된 관통공을 갖는 세라믹 유전체 기판과, 세라믹 유전체 기판을 지지하고, 관통공과 연통하는 가스 도입로를 갖는 금속제의 베이스 플레이트와, 가스 도입로에 설치된 세라믹 다공체와, 세라믹 다공체와 상기 가스 도입로 사이에 설치되고 세라믹 다공체보다 치밀한 세라믹 절연막을 갖는 절연체 플러그를 구비하고, 세라믹 절연막은 세라믹 다공체의 표면으로부터 세라믹 다공체의 내부로 침입한 것을 특징으로 한다. 가스 도입로 내에서의 방전에 대해서 높은 절연 내압을 얻을 수 있고, 또는 흡착 대상물에 대해서 웨이퍼 온도 균일성이 높은 온도 제어를 행할 수 있다.