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1. KR1020150034221 - 다중 유전체 게이트 스택을 갖는 III-V족 재료 활성 영역을 갖는 비-평면 반도체 디바이스

Office
Republic of Korea
Application Number 1020157002529
Application Date 12.06.2013
Publication Number 1020150034221
Publication Date 02.04.2015
Grant Number 1017317370000
Grant Date 28.04.2017
Publication Kind B1
IPC
H01L 29/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/775
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
775with one-dimensional charge carrier gas channel, e.g. quantum wire FET
CPC
H01L 29/0673
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
0669Nanowires or nanotubes
0673oriented parallel to a substrate
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 99/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
99Subject matter not provided for in other groups of this subclass
H01L 29/0665
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
H01L 29/201
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
201including two or more compounds ; , e.g. alloys
H01L 29/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
201including two or more compounds ; , e.g. alloys
205in different semiconductor regions ; , e.g. heterojunctions
Applicants 인텔 코포레이션
인텔 코포레이션
Inventors 듀이, 길버트
듀이, 길버트
라도사블리예비치, 마르코
라도사블리예비치, 마르코
필라리세티, 라비
필라리세티, 라비
추-쿵, 벤자민
추-쿵, 벤자민
무커지, 닐로이
무커지, 닐로이
Agents 양영준
양영준
백만기
백만기
Priority Data 13629154 27.09.2012 US
Title
(KO) 다중 유전체 게이트 스택을 갖는 III-V족 재료 활성 영역을 갖는 비-평면 반도체 디바이스
Abstract
(KO) 다중 유전체 게이트 스택들을 갖는 III-V족 재료 활성 영역들을 갖는 비-평면 반도체 디바이스들을 설명한다. 예를 들어, 반도체 디바이스는 기판 위에 배치되는 헤테로-구조체를 포함한다. 헤테로-구조체는 채널 영역을 갖는 3차원 III-V족 재료 바디를 포함한다. 소스 및 드레인 재료 영역은 3차원 III-V족 재료 바디 위에 배치된다. 트랜치는 소스 및 드레인 재료 영역에 배치되어 소스 영역을 드레인 영역으로부터 분리하고 채널 영역의 적어도 일부를 노출시킨다. 게이트 스택은 트랜치에 그리고 채널 영역의 노출된 부분 상에 배치된다. 게이트 스택은 제1 및 제2 유전체 층 및 게이트 전극을 포함한다.