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1. (KR1020150013483) 미립자 오염 측정 방법 및 장치

Office : Republic of Korea
Application Number: 1020147030594 Application Date: 28.03.2013
Publication Number: 1020150013483 Publication Date: 05.02.2015
Publication Kind : A
Prior PCT appl.: Application Number:PCTEP2013056794 ; Publication Number:WO2013149961 Click to see the data
IPC:
H01L 21/027
G03F 7/20
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
CPC:
H01L 21/0274
G03F 7/20
H01L 22/30
Applicants: 에이에스엠엘 네델란즈 비.브이.
티엔오
Inventors: 데 용, 안토니우스
반 데르 동크, 약퀴스
Agents: 특허법인(유)화우
Priority Data: 61/619,209 02.04.2012 US
Title: (KO) 미립자 오염 측정 방법 및 장치
Abstract:
(KO) 미립자 오염 측정 방법 및 장치가 개시된다. 상기 방법은, 예를 들어 측정될 표면(7)에 대해 폴리우레탄 엘라스토머(2)의 측정 표면(5)을 가압하는 단계, 잔여물을 남기지 않고 상기 표면으로부터 폴리우레탄 엘라스토머를 제거하는 단계, 이후 광학 장치(11)를 이용하여, 상기 표면으로부터 폴리우레탄 엘라스토머에 의해 제거되었고 폴리우레탄 엘라스토머에 부착된 입자들(8)을 검출하는 단계를 포함한다.
Also published as:
EP2834709US20150055127CN104204954JP6282260JP2015517101WO/2013/149961