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1. KR1020130063017 - 땜납 전사기재의 제조방법, 땜납 프리코트 방법 및 땜납 전사기재

Office Republic of Korea
Application Number 1020137008045
Application Date 25.08.2011
Publication Number 1020130063017
Publication Date 13.06.2013
Grant Number 1015305280000
Grant Date 22.06.2015
Publication Kind B1
IPC
B23K 1/20
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
1Soldering, e.g. brazing, or unsoldering
20Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
B23K 1/00
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
1Soldering, e.g. brazing, or unsoldering
B23K 3/06
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
3Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
06Solder feeding devices; Solder melting pans
H01L 21/60
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
Applicants 파나소닉 주식회사
Inventors 사쿠라이 다이스케
Agents 김영철
홍승규
Priority Data JP-P-2010-249576 08.11.2010 JP
Title
(KO) 땜납 전사기재의 제조방법, 땜납 프리코트 방법 및 땜납 전사기재
Abstract
(KO)
취약한 유전막을 갖는 반도체 소자의 취약한 유전막을 파괴하지 않고, 전자부품이나 회로기판에 대해 적절한 두께의 땜납 층을 확실하게 형성할 수 있는 땜납 전사기재의 제조방법을 제공한다. 기재 표면에 점착 층(2)을 형성하는 점착 층 형성공정과 점착 층 상에 간극을 갖도록 복수의 땜납 분말(3)을 탑재하여 땜납 층을 형성하는 땜납 형성공정, 점착 층 상에 형성한 땜납 분말의 간극에 필러(4)를 공급하는 필러 공급공정을 구비한다.