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1. KR1020070103500 - ALUMINUM PLATE FOR ALUMINUM ELECTROLYTIC CAPACITOR ELECTRODE, ALUMINUM ELECTROLYTIC CAPACITOR, AND PROCESS FOR PRODUCING ALUMINUM ELECTROLYTIC CAPACITOR

Office Republic of Korea
Application Number 1020077021014
Application Date 13.09.2007
Publication Number 1020070103500
Publication Date 23.10.2007
Publication Kind A
IPC
C22C 21/00
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
21Alloys based on aluminium
H01G 9/042
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
004Details
04Electrodes
042characterised by the material
H01G 9/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
CPC
C25D 11/04
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
04of aluminium or alloys based thereon
C25F 3/04
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
3Electrolytic etching or polishing
02Etching
04of light metals
H01G 9/045
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
004Details
04Electrodes ; or formation of dielectric layers thereon
042characterised by the material
045based on aluminium
H01G 9/055
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
004Details
04Electrodes ; or formation of dielectric layers thereon
048characterised by their structure
055Etched foil electrodes
Applicants NIPPON LIGHT METAL COMPANY, LIMITED
니폰게이긴조쿠가부시키가이샤
Inventors KATANO MASAHIKO
가타노 마사히코
ISOBE MASASHI
이소베 마사시
ARAI SHINICHI
아라이 신이치
Agents 박종화
Priority Data JP-P-2005-00084108 23.03.2005 JP
Title
(EN) ALUMINUM PLATE FOR ALUMINUM ELECTROLYTIC CAPACITOR ELECTRODE, ALUMINUM ELECTROLYTIC CAPACITOR, AND PROCESS FOR PRODUCING ALUMINUM ELECTROLYTIC CAPACITOR
(KO) 알루미늄 전해콘덴서 전극용 알루미늄판, 알루미늄전해콘덴서 및 알루미늄 전해콘덴서의 제조방법
Abstract
(EN)

An aluminum plate (1) having an aluminum purity of not less than 99.98% by mass and an Fe content of 5 to 50 ppm with the balance consisting of unavoidable impurities is used to realize increased capacitance of an aluminum electrolytic capacitor, reduced height, and improved high frequency characteristics. In this aluminum plate (1), the total content of Fe in crystal/precipitate is 1 to 50% based on the original content, and the thickness of the aluminum plate is 0.2 to 1 mm. In the formation of a capacitor anode, the aluminum plate (1) is subjected to alternate current etching so as to leave a core part (2) having an average thickness of 50 to 150 Vm in the center part in the thickness-wise direction to increase the surface area, followed by anodic oxidation.

© KIPO & WIPO 2007

(KO)
알루미늄 전해콘덴서의 고용량화, 저배화, 고주파특성의 향상을 도모하는 것을 목적으로 하여, 알루미늄 순도가 99.98질량%이상, Fe함유량이 5∼50ppm 및 나머지 부분이 불가피적 불순물로 이루어지는 알루미늄판(1)을 사용한다. 이 알루미늄판(1)은, 정출·석출물 중의 Fe의 합계량이 최초 함유량의 1∼50%, 두께가 0.2∼1mm이다. 콘덴서 양극을 형성하는 때에는, 두께방향의 중심부분에 평균두께가 50∼150μm의 심부(2)를 남기도록 알루미늄판(1)을 교류에칭하여 표면적을 확대한 후에 양극산화한다.