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54. (JP2001068771 ) SATURABLE BRAGG REFLECTOR USED FOR MODE-LOCKED LASER

Application Number: 2000220482 Application Date: 21.07.2000
Publication Number: 2001068771 Publication Date: 16.03.2001
Publication Kind : A
IPC:
G02F 1/17
G02F 1/35
G02F 1/355
H01S 3/98
H01S 3/113
H01S 5/65
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
17
based on variable absorption elements
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
35
Non-linear optics
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
35
Non-linear optics
355
characterised by the materials used
[IPC code unknown for H01S 3/98]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
10
Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11
in which the quality factor of the optical resonator is rapidly changed, i.e. giant-pulse technique
113
using bleachable or solarising media
[IPC code unknown for H01S 5/65]
CPC:
H01S 3/1118
G02F 1/3523
Applicants: LUCENT TECHNOL INC
ルーセント テクノロジーズ インコーポレイテッド|||【氏名又は名称原語表記】Lucent Technologies Inc.
Inventors: CUNNINGHAM JOHN E
ジョン エドワード カニングハム
KNOX WAYNE HARVEY
ウェイン ハーベイ ノックス
Priority Data: 35811299 21.07.1999 US
Title: (JA) レーザをモードロックするのに用いられる可飽和ブラグリフレクタ
(EN) SATURABLE BRAGG REFLECTOR USED FOR MODE-LOCKED LASER
Abstract: front page image
(JA)


【課題】 本発明の目的は、モードロックレーザで使用
される可飽和ブラグリフレクタ内に量子移動吸収体層を
導入した可飽和ブラグリフレクタを提供する。


【解決手段】 複数のエピタキシャル層を含む多層積層
体を有し、前記エピタキシャル層は、低屈折率の半導体
材料製の層と高屈折率の半導体材料製の層が交互に重ね
られてあり、前記低屈折率の層は、レーザの動作波長の
4分の1の光学厚さを有し、前記多層積層体の少なくと
も上部の2つの層を除いて、前記低屈折率層は、動作波
長の4分の1の光学厚さを有し、前記少なくとも2つの
上部層は、動作波長の8分の1の光学厚さを有し、吸収
材料製の量子移動が、前記8分の1波長の層の間に挟ま
れた高屈折率材料の層の各々内に配置されていることを
特徴とする。


(EN) PROBLEM TO BE SOLVED: To introduce a quantum well absorbing layer into a saturable Bragg reflector used in a mode-locked laser, by locating a quantum well within high refractive index layers having an optical thickness equal to a predetermined value of an operating wavelength, and sandwiching each high refractive index layer between low refractive index layers having a predetermined value of the operating wavelength.

SOLUTION: The saturable Bragg reflector 20 has a single crystal GaAs substrate, with low refractive index layers 22 and high refractive index layers 24 epitaxially grown thereon alternately. Each layer 22 has an optical thickness equal to 1/4 of an operating wavelength, and each layer 24 excluding the two uppermost ones 26A and 26B has an optical thickness equal to 1/4 of the operating wavelength. The layers 26A and 26B have an optical thickness equal to 1/8 of the operating wavelength. Further, a quantum well 28 is a layer having a thickness of about 100 made of a low refractive index material, and is located near the center of the GaAs layers 26A and 26B.

COPYRIGHT: (C)2001,JPO

Also published as:
DE000060014521EP1071179