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1. JP2022041671 - OVERCURRENT PROTECTION CIRCUIT AND SWITCHING CIRCUIT

Office
Japan
Application Number 2020147017
Application Date 01.09.2020
Publication Number 2022041671
Publication Date 11.03.2022
Publication Kind A
IPC
H02M 1/08
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1Details of apparatus for conversion
08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H03K 17/08
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
08Modifications for protecting switching circuit against overcurrent or overvoltage
H03K 17/082
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
08Modifications for protecting switching circuit against overcurrent or overvoltage
082by feedback from the output to the control circuit
H02M 1/00
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1Details of apparatus for conversion
CPC
H03K 17/08
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
08Modifications for protecting switching circuit against overcurrent or overvoltage
H02M 1/00
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1Details of apparatus for conversion
H03K 17/082
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
08Modifications for protecting switching circuit against overcurrent or overvoltage
082by feedback from the output to the control circuit
H02M 1/08
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1Details of apparatus for conversion
08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Applicants OMRON CORP
オムロン株式会社
Inventors IWAI SATOSHI
岩井 聡
SUEKI AOI
末木 葵
Agents 山田 卓二
徳山 英浩
和田 充夫
Title
(EN) OVERCURRENT PROTECTION CIRCUIT AND SWITCHING CIRCUIT
(JA) 過電流保護回路及びスイッチング回路
Abstract
(EN)

PROBLEM TO BE SOLVED: To protect a semiconductor switch against an overcurrent quickly compared with a conventional art.

SOLUTION: An overcurrent protection circuit comprises: a first transistor that has an emitter connected with a control voltage; and a second transistor that has a base connected with a collector of the first transistor, a collector connected with a base of the first transistor and pulled up to a predetermined voltage, and an emitter that is grounded. In the overcurrent protection circuit, the first and second transistors are turned on when the control voltage is larger than a predetermined first threshold voltage, and then, the control voltage is reduced due to reduction in the pull-up voltage, and a protection operation of turning off a switching element starts. The overcurrent protection circuit has: a first diode connected between the control voltage and the emitter of the first transistor; and an element circuit connected between the emitter and the base of the first transistor. The element circuit is any one of a second diode, a first resistor, and a parallel circuit of the second diode and the first resistor.

SELECTED DRAWING: Figure 5

COPYRIGHT: (C)2022,JPO&INPIT


(JA) 【課題】半導体スイッチを過電流から、従来技術に比較して高速に保護する。
【解決手段】過電流保護回路は、制御電圧に接続されたエミッタを有する第1のトランジスタと、第1のトランジスタのコレクタに接続されたベースと、第1のトランジスタのベースに接続されかつ所定電圧にプルアップされたコレクタと、接地されたエミッタとを有する第2のトランジスタとを備える。過電流保護回路は、制御電圧が所定の第1のしきい値電圧を超えるとき、第1及び第2のトランジスタがオンされ、プルアップ電圧の低下により制御電圧が低下されて、スイッチング素子をオフする保護動作を開始し、制御電圧と第1のトランジスタのエミッタとの間に接続される第1のダイオードと、第1のトランジスタのエミッタとベースの間に接続される素子回路とを備える。素子回路は、第2のダイオードと、第1の抵抗と、第2のダイオードと第1の抵抗の並列回路とのうちのいずれかである。
【選択図】図5

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