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1. JP2019201127 - POLISHING HEAD, AND WAFER POLISHING APPARATUS, AND POLISHING METHOD USING THE SAME

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Office
Japan
Application Number 2018095300
Application Date 17.05.2018
Publication Number 2019201127
Publication Date 21.11.2019
Grant Number 7003838
Grant Date 06.01.2022
Publication Kind B1
IPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
B24B 37/30
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
B24B 37/32
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
32Retaining rings
CPC
B24B 37/32
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
32Retaining rings
B24B 37/30
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
B24B 57/02
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
57Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
02for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
H01L 21/67092
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67092Apparatus for mechanical treatment
B24B 7/228
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
7Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
20characterised by a special design with respect to properties of the material of non-metallic articles to be ground
22for grinding inorganic material, e.g. stone, ceramics, porcelain
228for grinding thin, brittle parts, e.g. semiconductors, wafers
B24B 37/107
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
04designed for working plane surfaces
07characterised by the movement of the work or lapping tool
10for single side lapping
105the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
107in a rotary movement only, about an axis being stationary during lapping
Applicants SUMCO CORP
株式会社ＳＵＭＣＯ
Inventors NAKANO YUKI
中野　裕生
SUGIMORI KATSUHISA
杉森　勝久
KOSASA KAZUAKI
小佐々　和明
KAJIWARA JIRO
梶原　治郎
YAMAMOTO KATSUTOSHI
山本　勝利
KIHARA YOSHIYUKI
木原　誉之
TERAKAWA YOSHINARI
寺川　良也
Agents 鷲頭　光宏
緒方　和文
黒瀬　泰之
Title
(EN) POLISHING HEAD, AND WAFER POLISHING APPARATUS, AND POLISHING METHOD USING THE SAME
(JA) 研磨ヘッド及びこれを用いたウェーハ研磨装置及び研磨方法
Abstract
(EN)

PROBLEM TO BE SOLVED: To suppress waviness of polishing pressure on a peripheral part of a wafer and achieve high planarization.

SOLUTION: A polishing head 10 of a wafer polishing apparatus comprises: a membrane head 16 which is capable of independently controlling central part control pressure Pc pressing the central part of a wafer W and peripheral part control pressure Pe pressing a peripheral part of the wafer W; an outer ring 17 which is unified with the membrane head 16 so as to constitute a peripheral part of the membrane head 16; and a ground type retainer ring 14 which is provided for an outside of the membrane head 16, in which the membrane head 16 has: a central part pressure chamber R1 of a single chamber structure which controls the central part control pressure Pc; and a peripheral part pressure chamber R2 which is provided above a central part pressure chamber R1, and controls the peripheral part control pressure Pe, the position of a lower end of the outer ring 17 reaches at least the position of an inside bottom surface S1 of the central part pressure chamber R1, and the position of an upper end of the outer ring 17 reaches at least the position of an inside upper surface S2 of the central part pressure chamber R1.

SELECTED DRAWING: Figure 3

COPYRIGHT: (C)2020,JPO&INPIT


(JA)

【課題】ウェーハの外周部における研磨圧力のうねりを抑えて高平坦化を図る。
【解決手段】ウェーハ研磨装置の研磨ヘッド１０は、ウェーハＷの中心部を押圧する中心部制御圧力ＰｃとウェーハＷの外周部を押圧する外周部制御圧力Ｐｅとを独立に制御可能なメンブレンヘッド１６と、メンブレンヘッド１６の外周部を構成するように当該メンブレンヘッド１６と一体化された外リング１７と、メンブレンヘッド１６の外側に設けられた接地型リテーナリング１４とを備え、メンブレンヘッド１６は、中心部制御圧力Ｐｃを制御する単室構造の中心部圧力室Ｒ１と、中心部圧力室Ｒ１の上方に設けられ、外周部制御圧力Ｐｅを制御する外周部圧力室Ｒ２とを有し、外リング１７の下端の位置は、少なくとも中心部圧力室Ｒ１の内側底面Ｓ１の位置に達しており、外リング１７の上端の位置は、少なくとも中心部圧力室Ｒ１の内側上面Ｓ２の位置に達している。
【選択図】図３
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