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PROBLEM TO BE SOLVED: To suppress waviness of polishing pressure on a peripheral part of a wafer and achieve high planarization.
SOLUTION: A polishing head 10 of a wafer polishing apparatus comprises: a membrane head 16 which is capable of independently controlling central part control pressure Pc pressing the central part of a wafer W and peripheral part control pressure Pe pressing a peripheral part of the wafer W; an outer ring 17 which is unified with the membrane head 16 so as to constitute a peripheral part of the membrane head 16; and a ground type retainer ring 14 which is provided for an outside of the membrane head 16, in which the membrane head 16 has: a central part pressure chamber R1 of a single chamber structure which controls the central part control pressure Pc; and a peripheral part pressure chamber R2 which is provided above a central part pressure chamber R1, and controls the peripheral part control pressure Pe, the position of a lower end of the outer ring 17 reaches at least the position of an inside bottom surface S1 of the central part pressure chamber R1, and the position of an upper end of the outer ring 17 reaches at least the position of an inside upper surface S2 of the central part pressure chamber R1.
SELECTED DRAWING: Figure 3
COPYRIGHT: (C)2020,JPO&INPIT
【課題】ウェーハの外周部における研磨圧力のうねりを抑えて高平坦化を図る。【解決手段】ウェーハ研磨装置の研磨ヘッド10は、ウェーハWの中心部を押圧する中心部制御圧力PcとウェーハWの外周部を押圧する外周部制御圧力Peとを独立に制御可能なメンブレンヘッド16と、メンブレンヘッド16の外周部を構成するように当該メンブレンヘッド16と一体化された外リング17と、メンブレンヘッド16の外側に設けられた接地型リテーナリング14とを備え、メンブレンヘッド16は、中心部制御圧力Pcを制御する単室構造の中心部圧力室R1と、中心部圧力室R1の上方に設けられ、外周部制御圧力Peを制御する外周部圧力室R2とを有し、外リング17の下端の位置は、少なくとも中心部圧力室R1の内側底面S1の位置に達しており、外リング17の上端の位置は、少なくとも中心部圧力室R1の内側上面S2の位置に達している。【選択図】図3