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1. JP2018509766 - 光電子素子及びその製造方法

Office Japan
Application Number 2017547963
Application Date 07.03.2016
Publication Number 2018509766
Publication Date 05.04.2018
Grant Number 6763872
Grant Date 14.09.2020
Publication Kind B2
IPC
H01L 31/0445
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
0445including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L 31/0224
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
CPC
C03C 17/3417
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
3411with at least two coatings of inorganic materials
3417all coatings being oxide coatings
C03C 17/36
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
C03C 17/40
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
40all coatings being metal coatings
C23C 16/407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
407of zinc, germanium, cadmium, indium, tin, thallium or bismuth
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/022466
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
Applicants ビトロ フラット グラス エルエルシー
Inventors マッカミー、ジェイムズ ダブリュー.
マ、チーシュン
カバガンブ、ベンジャミン
コラム、クワク、ケイ.
ハン、チェン - ハン
ネリス、ゲイリー ジェイ.
Agents 特許業務法人浅村特許事務所
Title
(JA) 光電子素子及びその製造方法
Abstract
(JA)

光電子素子(10)は、第1の表面(14)及び第2の表面(16)を有する第1の基板(12)と、第2の表面(16)上に位置する下層(18)と、下層(18)上の第1の導電層(20)と、第1の導電層(20)上の上層(22)と、第1の導電層(20)上の半導体層(24)と、半導体層(24)上の第2の導電層(26)と、を含む。第1の導電層(20)は、導電性酸化物と、タングステン、モリブデン、ニオブ及びフッ素からなる群から選択された少なくとも1つのドーパントとを含み、及び/又は、上層(22)は、酸化スズと、亜鉛、インジウム、ガリウム及びマグネシウムからなる群から選択された少なくとも1つの材料を含むバッファ層(42)を含む。
【選択図】図1