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1. JP2016531434 - ケイ素金属浮遊ゲートを有するスプリットゲート不揮発性フラッシュメモリセル及びその製造方法

Office
Japan
Application Number 2016531848
Application Date 30.07.2014
Publication Number 2016531434
Publication Date 06.10.2016
Grant Number 6182268
Grant Date 28.07.2017
Publication Kind B2
IPC
H01L 21/336
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 27/1152
H01L 29/788
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
788with floating gate
H01L 29/792
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
792with charge trapping gate insulator, e.g. MNOS-memory transistor
CPC
H01L 27/11521
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11521characterised by the memory core region
H01L 29/42328
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42324Gate electrodes for transistors with a floating gate
42328with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
H01L 29/66825
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66825with a floating gate
H01L 29/7881
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
788with floating gate
7881Programmable transistors with only two possible levels of programmation
H01L 29/7883
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
788with floating gate
7881Programmable transistors with only two possible levels of programmation
7883charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
H01L 29/40114
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
401Multistep manufacturing processes
4011for data storage electrodes
40114the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
Applicants シリコン ストーリッジ テクノロージー インコーポレイテッド
Inventors ユ ジョン ウォン
コトフ アレクサンダー
トカチェフ ユリ
ス チエン シェン
Agents 西島 孝喜
弟子丸 健
田中 伸一郎
大塚 文昭
須田 洋之
上杉 浩
近藤 直樹
岸 慶憲
Priority Data 13958483 02.08.2013 US
Title
(JA) ケイ素金属浮遊ゲートを有するスプリットゲート不揮発性フラッシュメモリセル及びその製造方法
Abstract
(JA)

不揮発性メモリセルは、第2の導電型の離間された第1の領域及び離間された第2の領域を有し、それらの間にチャネル領域を形成する第1の導電型の基板を含む。選択ゲートは、第1の領域に隣接しているチャネル領域の第1の部分から絶縁され、かつ部分にわたって配置される。浮遊ゲートは、第2の領域に隣接しているチャネル領域の第2の部分から絶縁され、かつ、部分にわたって配置される。金属材料は、浮遊ゲートに接触して形成される。制御ゲートは、浮遊ゲートから絶縁されており、かつ浮遊ゲートにわたって配置される。消去ゲートは、第2の領域から絶縁され、かつ領域にわたって配置されており、及び、浮遊ゲートから絶縁され、かつ浮遊ゲートに横方向に隣接して配置された第1の部分と、制御ゲートから絶縁され、かつ制御ゲートに横方向に隣接している、及び浮遊ゲートの上に一部延在しかつ浮遊ゲートに垂直方向で重なり合う第2の部分とを含む。