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1. JP2016515299 - 希土類酸化物ゲート誘電体を備えた、シリコン基板上に成長したIII-N半導体素子

Office
Japan
Application Number 2015559236
Application Date 06.01.2014
Publication Number 2016515299
Publication Date 26.05.2016
Grant Number 6304899
Grant Date 16.03.2018
Publication Kind B2
IPC
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334Multistep processes for the manufacture of devices of the unipolar type
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02494Structure
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Applicants トランスルーセント  インコーポレイテッド
Inventors ダルギス,リティス
スミス,ロビン
クラーク,アンドリュー
アルクン,エルデム
レビー,マイケル
Agents 本城 雅則
丸山 温道
本城 吉子
Priority Data 13774962 22.02.2013 US
Title
(JA) 希土類酸化物ゲート誘電体を備えた、シリコン基板上に成長したIII-N半導体素子
Abstract
(JA)

【課題】シリコン基板上に成長したIII-N素子およびその製造方法を提供する。
【解決手段】当該III-N素子は、シリコン基板10上に配置され、シリコン基板10の表面と実質的に結晶格子整合する単結晶応力補償テンプレート11を含む。GaN層12が応力補償テンプレートの表面に置かれ、実質的にそれに結晶格子整合する単結晶III-N材料の活性層14が、GaN層12の上に成長し、さらに単結晶希土類酸化物誘電体層16が、前記単結晶III-N材料の活性層14上に成長している。
【選択図】図1


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